| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
CMOS IC 2M-bit (256K X 8) Serial Flash Memory 30MHz SPI Bus • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 30MHz • Temperature range : 0 to 70°C • Serial interface : SPI mode 0, mode 3 supported • Sector size : 256 bytes/page sector, 64K b |
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Sanyo Semicon Device |
Spindle Motor Driver IC • Three-phase brushless motor driver Functions • Current linear drive • Voltage controlled amplifier • The use of high side current detection means that there is no loss (or voltage drop) due to the current detection resistor. • Built-in short-circu |
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Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) • GaAs Infrared LED plus Single Phototransistor • Photo-Interrupter • Contact type • Compact type : H3.25 ! L5.0 ! W4.5mm • Application : For the general public welfare Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C 7032 ) Parameter Forwar |
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Sanyo Semicon Device |
4M-bit Serial Flash Memory 30MHz SPI Bus • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 30MHz • Temperature range : 0 to 70°C • Serial interface : SPI mode 0, mode 3 supported • Sector size : 256 bytes/page sector, 64K b |
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Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) • GaAs Infrared LED plus Single Phototransistor • Photo-Interrupter • Contact type • Compact type : H3.25 ! L5.0 ! W4.5mm Absolute Maximum Ratings at Ta=25°C, 65%RH Parameter Forward Current Reverse Voltage Power Dissipation Collector-Emitter Voltag |
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Sanyo Semicon Device |
Ultraminiature photointerrupter (single-transistor type) • GaAs Infrared LED plus Single Phototransistor • Photo-Interrupter • Contact type • Compact type : H4.95 ! L6.0 ! W5.5mm Absolute Maximum Ratings at Ta=25°C, 65%RH Parameter Forward Current Reverse Voltage Power Dissipation Collector-Emitter Voltag |
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Sanyo Semicon Device |
Ultraminiature photointerrupter supporting reflow soldering (Darlington-transistor type) • GaAs Infrared LED plus Darlington Phototransistor • Photo-Interrupter for reflow soldering • Compact type : H4.95 ! L6.0 ! W5.5mm • Taping type Absolute Maximum Ratings at Ta=25°C, 65%RH Parameter Forward Current Reverse Voltage Power Dissipation |
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Sanyo Semicon Device |
Ultraminiature photoreflector (single-transistor type) • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm • Visible light cut type • Lead length : (L=3.5mm) Absolute Maximum Ratings at Ta=25°C, 65%RH Parameter Forward Current Reverse Voltage Power Dis |
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Sanyo Semicon Device |
Ultraminiature photoreflector supporting reflow soldering Single transistor type • Infrared LED plus Phototransistor (single) • DIP type • Compact type : 3.4 (L) ! 2.7 (W) ! 1.5 (H) mm • Visible light cut type • Taping type Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C7032) Parameter Forward Current Reverse Voltage Po |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 32Kbits (4K×8bits) : 2.7V to 5.5V |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 128Kbits (16K×8bits) : 2.7V to 5.5 |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 128Kbits (16K×8bits) : 2.7V to 5.5 |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 512Kbits (64K×8bits) : 2.7V to 3.6 |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 32Kbits (4K×8bits) : 1.8V to 3.6V |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 64Kbits (8K×8bits) : 1.8V to 3.6V |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 128Kbits (16K×8bits) : 1.8V to 3.6 |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 256Kbits (32K×8bits) : 1.8V to 3.6 |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 64Kbits (8K×8bits) : 1.8V to 3.6V |
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Sanyo Semicon Device |
Serial SPI EEPROM • Capacity • Single supply voltage • Serial interface • Operating clock frequency • Low current dissipation • Page write function • Rewrite time • Number of rewrite times • Data retention period • High reliability : 64Kbits (8K×8bits) : 1.8V to 3.6V |
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Desde 2024. D4U Semiconductor.
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