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Sanyo Semicon Device |
Schottky Barrier Diode 100V 25A Rectifier • • • • Low reverse current. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Vo |
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Sanyo Semicon Device |
Schottky Barrier Diode 100V 25A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.80V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolu |
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Sanyo Semicon Device |
Schottky Barrier Diode • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.48V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute M |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 0.5A Rectifier • • • Low Switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting SB0503SH applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C (Value pe |
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Sanyo Semicon Device |
Schottky barrier diode |
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Sanyo Semicon Device |
Schottky barrier diode |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with an N-channel silicon MOSFET (SCH1406) and a Schottky barrier diode (SBS018) contained in one package facilitating hi |
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Sanyo Semicon Device |
Schottky Barrier Diode 60V 15A Rectifier • • • • • • Tj=150°C. Low forward voltage (VF max=0.58V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolute Maximum Rating |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 25A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specificatio |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 25A Rectifier • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetit |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 200mA Rectifier • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultraminiature (1608 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak |
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Sanyo Semicon Device |
Low IR Schottky Barrier Diode 30V 0.5A Rectifier • • • Low switching noise. Low leakage current and high reliability due to planar structure. Ultraminiature (1008 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage |
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Sanyo Semicon Device |
Schottky Barrier Diode 90V 0.5A Rectifier • • • Fast reverse recovery time (trr max=20ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 1.0A Rectifier • • Low switching noise. Low reverse current (VR=16V, IR max=15μA). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current J |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=115mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Vo |
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Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode · Series connection of 2 elements in a small-sized package facilitates high-density mounting and permits 1SS351-applied equipment to be made smaller. · Small interterminal capacitance (C=0.69pF typ). · Small forward voltage (VF=0.23V max). Package D |
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Sanyo Semicon Device |
Schottky Barrier Diode · Small-sized package facilitates high-density mounting and permits 1SS365-applied equipment to be made smaller. · Small interterminal capacitance. · Low forward voltage. · High breakdown voltage. Package Dimensions unit:mm 1148A [1SS365] 1:Anode 2 |
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Sanyo Semicon Device |
Schottky Barrier Diode · Series connection of 2 elements in a very small-sized package facilitates high-density mounting and permits 1SS375-applied equipment to be made smaller. · Small interterminal capacitance. · Low forward voltage. · High breakdown voltage. Package Di |
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Sanyo Semicon Device |
Schottky Barrier Diode · Glass sleeve structure. · Detection efficiency : 70%. · Small size (Half the size of the DO-35 heretofore in use) Package Dimensions unit:mm 1153A [SB0015-03A] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Avera |
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Desde 2024. D4U Semiconductor.
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