| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
Rectifier • • • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 1.0A Rectifier • • Low switching noise. Low reverse current (VR=16V, IR max=15μA). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current J |
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Sanyo Semicon Device |
Rectifier • • • • • Composite type with 2 low IR SBDs in one package, facilitating high density mounting. Small switching noise. Low forward voltage (IF=2.0A, VF max=0.57V). Low reverse current (VR=7.5V, IR max=6μA). Ultrasmall package permitting applied sets |
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Sanyo Semicon Device |
30V/ 2A Rectifier Unit V V A A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rth(j-a) IR=500µA IF=2A VR=15V VR=10V, f=1 |
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Sanyo Semicon Device |
50V/ 1A Rectifier Unit V V A A ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time Thermal Resistance Symbol VR VF IR C trr Rthj-a IR=300µA IF=1A VR=25V VR=10V, f=1M |
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Sanyo Semicon Device |
100V/ 400mA Rectifier • • • • 5 4 3 0.6 Low forward voltage (VF max=0.7V). Fast reverse recovery time (trr max=10ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. 1 0.95 2 0.4 0.6 1.6 2.8 0.05 0.2 0.15 |
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Sanyo Semicon Device |
90V/ 200mA Rectifier · Low forward voltage (VF max=0.7V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Abs |
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Sanyo Semicon Device |
500mA Rectifier • • • Package Dimensions unit : mm 1294 [SBE805] 2.9 0.15 • 1 0.95 2 0.4 0.6 1.6 2.8 Low forward voltage (VF max=0.55V). Fast reverse recovery time (trr max=10ns). Composite type with 2 diodes contained in the CPH package currently in use, im |
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Sanyo Semicon Device |
Schottky Barrier Diode 15V 1A Rectifier • • • Small switching noise. Low leakage current and high reliability due to planar structure. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetit |
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Sanyo Semicon Device |
Rectifier • • • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package allows applied sets to be made small and thin. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) |
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Sanyo Semicon Device |
Rectifier • • • Small switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive |
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Sanyo Semicon Device |
Rectifier • • • • • Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting. Small switching noise. Low forward voltage (IF=2.0A, VF max=0.62V). Low reverse current (VR=15V, IR max=7.5μA). Ultrasmall package permitti |
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Sanyo Semicon Device |
2A Rectifier • • • • Low forward voltage (VF max=0.60V). Fast reverse recovery time (trr max=20ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Absolute Maximum Ratings at Ta=25°C Parameter Repetitive P |
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Desde 2024. D4U Semiconductor.
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