| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
30V/ 70mA Rectifier · Low forward voltage(VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode SANYO:CP Specifications Absolute Maximum |
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Sanyo Semicon Device |
30V/ 70mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Series connection of 2 elements in a small-sized package f |
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Sanyo Semicon Device |
90V/ 200mA Rectifier · Low forward voltage (VF max=0.7V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. JEDEC:TO-92 EIAJ:SC-43 SANYO:NP 1:Anode 2:Cathode 3:No Con |
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Sanyo Semicon Device |
30V/ 700mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:No Contact 3:Cathode SANYO:CP Specifications Ab |
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Sanyo Semicon Device |
30V 500mA Rectifier • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultraminiature (1608 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 0.5A Rectifier • • • Low Switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting SB0503SH applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C (Value pe |
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Sanyo Semicon Device |
150V/ 20mA Rectifier · Low forward voltage (VF max=0.75V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planner structure. 1:Anode 2:No Contact 3:Cathode SANYO:SPA Specifications A |
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Sanyo Semicon Device |
40V/ 30mA Rectifier ⋅ Glass-sleeve structure. ⋅ Facilitating high-density mounting. Absolute Maximum Ratings at Ta = 25 ˚C Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature Symbol VRM VR IO Tj Tstg Conditi |
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Sanyo Semicon Device |
90V/ 50mA Rectifier · Low forward voltage (VF max=0.7V). · Fast reverse recovery time (trr=10ns max). · Low switching noise. · Low leakage current and high reliability due to highly reliable planner structure. C:Cathode A:Anode SANYO:SPA Specifications Absolute Maximu |
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Sanyo Semicon Device |
30V / 70mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliablity due to highly reliable planar structure. Package Dimensions unit:mm 1169A [SB007W03C] Specifications |
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Sanyo Semicon Device |
150V/ 100mA Rectifier · Low forward voltage (VF max=0.75V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode SANYO:CP Specifications Absolute Maximu |
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Sanyo Semicon Device |
30V/ 200mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode SANYO:CP Specifications Absolute Maximu |
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Sanyo Semicon Device |
30V / 200mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Ultrasmall-sized package permitting SB02-03Q- applied sets |
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Sanyo Semicon Device |
30V/ 500mA Rectifier • Low forward voltage (VF max=0.55V). • Fast reverse recovery time (trr max=10ns). • Low switching noise. • Low leakage current and high reliability due to highly reliable planar structure. • Ultrasmall-sized package, permitting SB05-03Q-applied sets |
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Sanyo Semicon Device |
50V/ 500mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:Cathode 3:No Contact SANYO:PCP Specifications A |
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Sanyo Semicon Device |
50V/ 500mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. 1:Anode 2:Cathode 3:No Contact SANYO:PCP Specifications A |
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Sanyo Semicon Device |
50V/ 500mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. C:Cathode A:Anode SANYO:CP Specifications Absolute Maximu |
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Sanyo Semicon Device |
90V/ 500mA Rectifier · Low forward voltage (VF max=0.7V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. EIAJ:SC-51 SANYO:MP C:Cathode A:Anode Specifications Abso |
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Sanyo Semicon Device |
180V / 500mA Rectifier · Low forward voltage (VF max=0.85V). · Fast reverse recovery time (trr max=20ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. Package Dimensions unit:mm 1289 [SB05-18V] Specifications |
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Sanyo Semicon Device |
15V/ 700mA Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recorvery time (trr max=10ns). · Low switching noise. · Low leakage current and high reliability due to highly reliable planar structure. · Small-sized package, permitting SB07-015Capplied sets to |
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Desde 2024. D4U Semiconductor.
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