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Sanyo Semicon Device |
High-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low forward voltage (VF max=1.3V). Low switching noise. Halogen free compliance. Specifications Absolute |
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Sanyo Semicon Device |
High-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). Fast reverse recovery time. Low noise at the time of reverse recovery. Low forward voltage (VF max=1.6V). Halogen free compliance. S |
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Sanyo Semicon Device |
High-Speed Switching Diode • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode • • VRRM=400V trr=17ns(typ.)(IF=0.5A, IR=1A) VF max=1.5V Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage |
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Desde 2024. D4U Semiconductor.
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