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Sanyo Semicon Device |
N-Channel Silicon MOSFET • Best suited for motor drive. • Low ON-resistance. • Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel T |
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Sanyo Semicon Device |
CMOS LSI VTR(B/VHS) SERVO CIRCUIT |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Vo |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1417] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 12 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET |
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Sanyo Semicon Device |
N-Channel MOSFET · Largeyfs. · Ultralow noise figure. · Small Crss. Package Dimensions unit:mm 2034A [2SK427] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Drain Voltag |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1416 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SK1416] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 12 |
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Sanyo Semicon Device |
Microstep Operation-Supported 4-Phase Stepping Motor Driver (Io= 1.5A) • Microstep sine-wave driver operation using only an external clock input (0.33Ω current detection resistor built-in) • Microstep drive using only an external reference voltage setting resistor • 2, 1-2, W1-2, 2W1-2, 4W1-2 phase excitation selectable |
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Sanyo Semicon Device |
Bi-CMOS IC Step-down Switching Regulator s at Ta = 25°C Symbol VIN max VBT max VSW max VBS-SW max VEN max Vfs max Pd max Tj max Topr Tstg With specified substrate * Conditions Ratings 20 25 VIN max 7 20 7 1.15 150 -20 to 80 -40 to 150 Unit V V V V V V W °C °C °C Maximum input VIN voltage BO |
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Sanyo Semicon Device |
Bi-CMOS IC industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportatio |
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Sanyo Semicon Device |
CMOS LSI PLL FREQUENCY SYNTHSIZER LSI |
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Sanyo Semicon Device |
P-Channel MOSFET |
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Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ339] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). Package Dimensions unit:mm 2077A [2SK1414] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximu |
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Sanyo Semicon Device |
Silicon N-Channel MOSFET |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1897] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 A |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1898-applied equipment. · High density surface mount appli |
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Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs • Package Dimensions • • • Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202 featuring low ON-resistance and high-speed switching. The other is an N-channel small signal MOSFET used fo |
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Sanyo Semicon Device |
CMOS LSI PLL FREQUENCY SYNTHSIZER LSI |
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Sanyo Semicon Device |
CMOS LSI |
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Desde 2024. D4U Semiconductor.
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