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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2083B [2SK2616] 1.5 6.5 5.0 4 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SK2616] 6.5 5.0 4 2 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2083B [2SK2623] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2092B [2SK2623] 6.5 5.0 4 2.3 1 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • Package Dimensions unit : mm 2078C [2SK2625LS] 10.0 3.2 3.5 7.2 Low ON-resistance. Low Qg. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 0.7 1 2 3 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltag |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2128 [2SK2627] 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.0 6.2 5.2 7.8 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Param |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • Package Dimensions unit : mm 2078C [2SK2682LS] 10.0 3.2 3.5 7.2 Low ON-resistance. High-speed diode. Micaless package facilitating mounting. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • Enhancement type • Small noise figure • Small cross modulation N-Channel Silicon MOSFET (Dual Gate) FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Vo |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Enhancement type. · Easy AGC (Cut off at VG2S=0V). · Small noise figure. · Excels in cross modulation characteristics. Package Dimensions unit:mm 2096A [3SK264] 1.9 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specification |
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Sanyo Semicon Device |
VHF/ CATV Tuner/ High-Frequency Amp Applications |
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Sanyo Semicon Device |
2SK2628ALS • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current |
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Sanyo Semicon Device |
2SK2617ALS • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current |
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Sanyo Semicon Device |
N-Channl Silicon MOSFET • Low ON-resistance. • Low Qg. 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 1.2 2.4 14.0 0.75 0.7 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2078B [2SK2624LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • Package Dimensions unit : mm 2078C [2SK2628LS] 10.0 3.2 4.5 2.8 Low ON-resistance. Low Qg. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 14.0 0.7 1 2 3 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • Package Dimensions unit : mm 2083B [2SK2631] 6.5 5.0 4 Low ON resistance. Smaller amount of total gate charge. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : T |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-resistance. · Low Qg. Package Dimensions unit:mm 2078B [2SK2632LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Sou |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. • Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Puls |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • General-Purpose Switching Device Applications Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current |
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Desde 2024. D4U Semiconductor.
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