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Sanyo Semicon Device |
P-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. P-Channel Silicon MOSFET FSS101 Load S/W Applications Package Dimensions unit:mm 2116 [FSS101] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
DC/DC Converter Applications · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2116 [FSS104] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. FSS131 P-Channel Silicon MOSFET FSS131 Load Switching Applications Package Dimensions unit : mm 2116 [FSS131] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 0.595 1.27 0.43 1 : Source 2 |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2116 [FSS132] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. FSS133 P-Channel Silicon MOSFET FSS133 Load Switching Applications Package Dimensions unit : mm 2116 [FSS133] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 1 : Source 2 : Source 3 : Sour |
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Sanyo Semicon Device |
Load Switching Applications • • • Package Dimensions unit : mm 2116 [FSS139] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Volta |
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Sanyo Semicon Device |
DC/DC Converter Applications · Low ON-resistance. · 4V drive. Package Dimensions unit:mm 2116 [FSS216] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · 4V drive. N-Channel Silicon MOSFET FSS232 Load Switching Applications Package Dimensions unit:mm 2116 [FSS232] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to |
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Sanyo Semicon Device |
DC/DC Converter Applications · Low ON resistance. · 4V drive. · Ultrahigh-speed switching. Package Dimensions unit:mm 2116 [FSS242] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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Sanyo Semicon Device |
DC / DC Converter Applications • • • Package Dimensions unit : mm 2116 [FSS244] 8 5 0.3 4.4 6.0 0.2 5.0 Low ON-resistance. 4V drive. Ultrahigh speed switching. 1.5 1.8max 1 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Spe |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. P-Channel Silicon MOSFET FSS106 DC/DC Converter Applications Package Dimensions unit:mm 2116 [FSS106] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
DC/DC Converter Applications · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2116 [FSS134] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Package Dimensions unit:mm 2116 [FSS138] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON resistance. · 2.5V drive. Package Dimensions unit:mm 2116 [FSS207] 8 5 0.3 4.4 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · 4V drive. N-Channel Silicon MOSFET FSS212 DC/DC Converter Applications Package Dimensions unit:mm 2116 [FSS212] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-t |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2116 [FSS238] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · 4V drive. · Ultrahigh-speed switching. N-Channel Silicon MOSFET FSS250 DC/DC Converter Applications Package Dimensions unit:mm 2116 [FSS250] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=7.8mΩ(typ.) Input capacitance Ciss=2650pF(typ.) 4V drive Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at |
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Desde 2024. D4U Semiconductor.
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