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Sanyo Semicon Device |
UHF to C Band Low Noise Amplifier • • UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications • • Low noise : NF=0.9dB typ (f=1.8GHz). High cut-off frequency : fT=20GHz typ (VCE=1V). : fT=29GHz typ (VCE=4V). Low voltage operation. High Gain : S21e2=18.5dB typ |
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Sanyo Semicon Device |
UHF to C Band Low Noise Amplifier • • Package Dimensions • • • Low noise : NF=0.9dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2214 : fT=29GHz typ (VCE=4V). Low voltage operation. Bottom View High Gain : S21e2=18.5dB typ (f=1.8GHz). 0.35 Ultrasmall |
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Sanyo Semicon Device |
DC-DC Converter Applications · Composite type with a high-speed N-channel MOSFET and a low-forward voltage Schottky barrier diode contained in the PCP4 package, saving the mount space greatly. Package Dimensions unit:mm 2132 [FP502] 1:Source, Anode 2:Common (Drain, Cathode) 3:S |
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Sanyo Semicon Device |
SBFP540D • • • • • • Package Dimensions 3 0.05 4 0.6 1.0 2 1 0.3 (Bottom View) 0.3 Low noise : NF=0.9dB typ (f=1.8GHz). unit : mm High cutoff frequency : fT=20GHz typ(VCE=1V). 2215 High cutoff frequency : fT=29GHz typ(VCE=4V). Low voltage operation. H |
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Desde 2024. D4U Semiconductor.
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