No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
Very High-Speed Switching Applicaitons · Low ON resistance. · Very high-speed switching. · Complex type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting. Electrical Connection 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain (Top view) 1:Gate 2:Drain 3:S |
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Sanyo Semicon Device |
Very High-Speed Switching Applications · Low ON resistance. · Very high-speed switching. · Composite type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting. Electrical Connection 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain (Top view) 1:Gate 2:Drain 3 |
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Sanyo Semicon Device |
UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications • • Package Dimensions unit : mm 0000 [SBFP420M] 0.25 • • Low noise : NF=1.1dB typ (f=1.8GHz). High cut-off frequency : fT=18GHz typ (VCE=1V). : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=1.8GHz). 0.3 4 3 0.15 |
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Sanyo Semicon Device |
UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications • • Package Dimensions unit : mm 0000 [SBFP420M] 0.25 • • Low noise : NF=1.1dB typ (f=1.8GHz). High cut-off frequency : fT=18GHz typ (VCE=1V). : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=1.8GHz). 0.3 4 3 0.15 |
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Sanyo Semicon Device |
UHF to C Band Low-Noise Amplifier Osc. Applications • • • • • Package Dimensions unit : mm 0000 [SBFP405B] 0.35 0.2 0.15 0.05 3 0.15 4 0.25 Low noise : NF=1.25dB typ (f=1.8GHz). High cut-off frequency : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=18dB typ (f=1.8GHz). Ultramini |
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Sanyo Semicon Device |
SBFP405D |
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Sanyo Semicon Device |
UHF to C Band Low Noise Amplifier Oscillation Applications • • Package Dimensions • • • Low noise : NF=1.1dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2214 : fT=25GHz typ (VCE=3V). Low voltage operation. Bottom View High Gain : S21e2=17dB typ (f=1.8GHz). 0.35 0.2 Ultrasma |
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Sanyo Semicon Device |
SBFP450M .DataSheet4U.com Ω ∠ ∠ ∠ ∠ SBFP450M www.DataSheet4U.com Ω ∠ ∠ ∠ ∠ SBFP450M www.DataSheet4U.com Ω ∠ ∠ ∠ ∠ SBFP450M www.DataSheet4U.com Ω µ Ω Ω Ω Cbc Lc Lb Cbe CC Le SBFP450M www.DataSheet4U.com |
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Sanyo Semicon Device |
UHF to C Band Low Noise Amplifier Oscillation Applications • • Package Dimensions • • • Low noise : NF=1.1dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2215 : fT=25GHz typ (VCE=3V). Low voltage operation. High Gain : S21e2=17dB typ (f=1.8GHz). 0.2 0.05 Ultrasmall (1008 siz |
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