| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
2SD612 · High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. Package Dimensions unit:mm 2010C [2SB633/2SD613] ( ) : 2SB633 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
Separately-Excited Step-Down Switching Regulator • • • • • • ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (24V Output type) High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET). Over current protection function (Self recovery t |
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Desde 2024. D4U Semiconductor.
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