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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataSheet4U.com • Adoption of MBIT process. • On-chip damper diode. • • Package Dimensions unit : mm 2174A [2SD2624] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 21.0 |
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Sanyo Semicon Device |
2SD2634 • • • • • Package Dimensions unit : mm 2174A [2SD2634] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 2 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • Package Dimensions unit : mm 2079C [2SD2627] 10.0 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • High speed. • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2079D [2SD2658LS] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2079D [2SD2689LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2079C 10.0 3.2 [2SD2627] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 |
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Sanyo Semicon Device |
2SD2689LS High speed. High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). www.DataSheet4U.com • Adoption of MBIT process. • • Package Dimensions unit : mm 2079D [2SD2689LS] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14. |
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Sanyo Semicon Device |
NPN Transistor · Darlington connection · High DC current gain. · DC current gain is less affected by temperature. 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 2.54 2.54 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • Package Dimensions unit : mm 2010C [2SB1683 / 2SD2639] 10.2 3.6 5.1 2.7 6.3 4.5 Wide ASO because of on-chip ballast resistance. Good dependence of fT on current and good HF characteristic. 1.3 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 2.7 Sp |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • Package Dimensions unit : mm 2079D [2SD2688LS] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor • • High DC current gain. Large current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) C |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • Package Dimensions unit : mm 2079D [2SD2627] 10.0 3.2 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 |
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Sanyo Semicon Device |
NPN Transistor • • • • • Package Dimensions unit : mm 2174A [2SD2624] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • Package Dimensions unit : mm 2174A [2SD2634] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 2 |
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Sanyo Semicon Device |
NPN Transistor • • • • • Package Dimensions unit : mm 2174A [2SD2645] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2174A [2SD2646] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2174A [2SD2648] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2174A [2SD2650] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 3. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Darlington Transistors • • • 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 High DC current gain. Large current capacity and wide ASO. Micaless package facilitating mounting. 3.3 0.7 1 2 3 ( ) : 2SB1700 1 : Emitter 2 : Collector 3 : Base 1.7 Specifications Absolu |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit : mm 2174A [2SD2649] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2.0 2.1 0.7 0.9 20.4 12 |
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Desde 2024. D4U Semiconductor.
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