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Sanyo Semicon Device |
2SD1913 Wide ASO (Adoption of MBIT process). • Low saturation voltage. www.DataSheet4U.net • High reliability. • High breakdown voltage. • Micaless package facilitating mounting. • 10.0 3.2 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1270/2SD1906] ( ) : 2SB1270 Specifications E : Emitter C : Collector B : Base SANYO :TO-2 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Triple Diffused Planar Type Silicon Transistors · Suitable for sets whose heighit is restricted. · Wide ASO (adoption of MBIT process). · High reliability. Package Dimensions unit:mm 2049B [2SB1266/2SD1902] ( ) : 2SB1266 Specifications E : Emitter C : Collector B : Base SANYO : TO-220MF Absolu |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. Package Dimensions unit:mm 2049B [2SB1268/2SD1904] ( ) : 2SB1268 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Volta |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Type Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1271/2SD1907] ( ) : 2SB1271 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramet |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor Package Dimensions • Fast switching speed. unit: mm • Especially suited for use in high-definition CRT display : 2049B-TO-220MF VCC=6 to 12V. • Wide ASO and highly resistant to breakdown. [2SD1908] Specifications Absolute Maximum Ratings at Ta=25 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors • • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute |
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Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between collector and emitter. • Large current capacity. • Small-sized package making it easy to provide high-density, small-sized hybrid ICs. Speci |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacitance. • Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Packag |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emi |
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Sanyo Semicon Device |
Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Large current capacity. · Low collector to emitter saturation voltage. · Very small-sized package permitting sets to be made smaller and slimer. Package Dimensions unit:mm 2018A [2SB1295/2SD1935] ( ) : 2SB1295 Specifications C : Collector B : Ba |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Large current capacity. · Low collector to emitter saturation voltage. · Wide ASO. Package Dimensions unit:mm 2033 [2SB1296/2SD1936] ( ) : 2SB1296 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
NPN Transistor · Darlington connection (on-chip bias resistance, damper diode). · High DC current gain. · Low dependence of DC curr ent gain on temperature. 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 : Emitter 1 2 3 Specifications Absolute Maximum Ratings at Ta = 2 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
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Desde 2024. D4U Semiconductor.
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