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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2022A [2SB912/2SD1229] ( ) : 2SB912 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Colle |
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Sanyo Semicon Device |
PNP/NPN Transistors · Power supplies, relay drivers, lamp drivers, and automotive wiring. Features · FBET and MBIT processed (Original process of SANYO). · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB892/2SD1207] |
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Sanyo Semicon Device |
2SD1246 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base |
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Sanyo Semicon Device |
PNP/NPN Transistors · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2022A [2SB904/2SD1213] ( ) : 2SB904 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collect |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2022A [2SB913/2SD1230] ( ) : 2SB913 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Colle |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB921L/2SD1237L] ( ) : 2SB921L Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Coll |
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Sanyo Semicon Device |
0.2W Zener Diodes · Reference voltage use. · Votlage regulators use. · Power dissipation : P=200mW. · Voltage range : ±2.5% subdivided. · High reliability due to planar type. · Ideally suited for use in hybrid ICs because of ultra small package. Package Dimensions un |
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Sanyo Semicon Device |
PNP/NPN Transistors · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB903/2SD1212] ( ) : 2SB903 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collect |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · High current capacity. Package Dimensions unit:mm 2010C [2SB920L/2SD1236L] ( ) : 2SB920L Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2006A [2SB927/2SD1247] ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Low collector-to-emitter saturation voltage : VCE(sat)=--0.5V (PNP), 0.4V (NPN) max. • Large current capacity. [2SB920 / 2SD1236] 10.2 3.6 5.1 4.5 1.3 2.7 15.1 6.3 18.0 5.6 1.2 2.7 14.0 0.8 Specifications ( ) : 2SB920 Absolute Maximum Rati |
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Desde 2024. D4U Semiconductor.
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