Sanyo Semicon Device C60 Hoja de datos

No.	parte #	Fabricante	Descripción
1	C6082	Sanyo Semicon Device	2SC6082 • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Coll
2	2SC6025	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistor • • UHF to C Band Low-Noise Amplifier and OSC Applications NF=1.2dB typ (f=2GHz). fT=14GHz typ (VCE=1V). fT=21GHz typ (VCE=3V). S21e2=12.5dB typ (f=2GHz). • • Low-noise use : High cut-off frequency : : Low operating voltage. High gain : Specifi
3	2SC6093LS	Sanyo Semicon Device	NPN Triple Diffused Planar Silicon Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
4	C6090LS	Sanyo Semicon Device	2SC6090LS • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute
5	C6017	Sanyo Semicon Device	2SC6017 • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte
6	C6099	Sanyo Semicon Device	2SC6099 • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base
7	FC601	Sanyo Semicon Device	DC-DC Converter Applications · Composed of a Shottky barrier diode and a PNP transistor with built-in resistors, and contained in one CP package, resulting in greatly improved circuitboard using efficiency. · The FC601 is composed of an equivalent chip to the SB007-03CP and an e
8	2SC6099	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistor • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base
9	C6093LS	Sanyo Semicon Device	NPN Transistor • • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
10	2SC6089	Sanyo Semicon Device	NPN Triple Diffused Planar Silicon Transistor • • • • NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). Adoption of high reliability HVP process. Adoption of MBIT process. Specifications Absolute
11	C6094	Sanyo Semicon Device	2SC6094 • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base
12	C6019	Sanyo Semicon Device	2SC6019 • • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Pa
13	2SC6024	Sanyo Semicon Device	NPN Transistor • • UHF to C Band Low-Noise Amplifier and OSC Applications • • • Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=12.5dB typ (f=2GHz). Ultram
14	2SC6023	Sanyo Semicon Device	NPN Transistor • • UHF to C Band Low-Noise Amplifier and OSC Applications NF=1.2dB typ (f=2GHz). fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). S21e2=14dB typ (f=2GHz). • • Low-noise use : High cut-off frequency : : Low operating voltage. High gain : Specifi
15	2SC6019	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistor • • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Pa
16	2SC6017	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistors • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte
17	2SC6016	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistor • • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Col
18	2SC6015	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistor • • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Col
19	2SC6013	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistor • • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Col
20	2SC6082	Sanyo Semicon Device	NPN Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Coll