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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Adoption of MBIT process. • High-speed switching. • Large current capacitance. • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA |
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Sanyo Semicon Device |
2SC5991 • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Paramete |
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Sanyo Semicon Device |
2SC5966 • • • • Package Dimensions unit : mm 2174A [2SC5966] 16.0 5.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN Transistor • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Colle |
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Sanyo Semicon Device |
NPN Transistor • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Paramete |
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Sanyo Semicon Device |
NPN TRANSISTOR |
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Sanyo Semicon Device |
NPN Transistors • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-t |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2125 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter |
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Sanyo Semicon Device |
NPN SILICON TRANSISTOR • • • • Package Dimensions unit : mm 2174A [2SC5966] 16.0 5.0 High-speed. High breakdown voltage (VCBO=1700V). High reliability (Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR • • • • • 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD 2.55 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Vol |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • Package Dimensions unit : mm 2069C [2SC5947] 0.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 10.2 4.5 1.3 9.9 1.5max 8.8 3.0 2.55 1.2 2.55 1.35 1 0.8 2 3 0 to 0.3 0.4 1 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Param |
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Sanyo Semicon Device |
2SC5967 High-speed. High breakdown voltage (VCBO=1700V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. www.DataSheet4U.com • • Package Dimensions unit : mm 2048B [2SC5967] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2048B [2SC5932] 6.0 20.0 3.3 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absol |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2042B [2SC5951] 8.0 1.0 1.4 4.0 1.0 3.3 High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 Absolute Maximum Ratings at |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor www.DataSheet4U.com • • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2048B [2SC5933] 6.0 20.0 3.3 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Absol |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2010C [2SC5957] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 18.0 5.6 1.2 14.0 0.8 15.1 0.4 1 2 3 Specifications Abso |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors • Adoption of MBIT process. • High-speed switching. • Large current capacitance. • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA |
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Desde 2024. D4U Semiconductor.
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