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Sanyo Semicon Device |
2SC5888 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications ( ) : 2SA2099 Absolute Maximum Ratings at |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2045B [2SC5808] 6.5 5.0 4 High breakdown voltage. High speed switching. Wide ASO. Adoption of MBIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Em |
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Sanyo Semicon Device |
2SC5887 • • • • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications ( ) : 2SA2098 Absolute Max |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors • • • • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications ( ) : 2SA2099 Absolute Maximum |
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Sanyo Semicon Device |
2SC5811 • • • • Package Dimensions unit : mm 2174A [2SC5811] 16.0 5.0 High speed. High breakdown voltage : VCBO=1600V. High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2045B [2SC5823] 6.5 5.0 4 High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 1 : Base 2 : Collector 3 : Emitt |
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Sanyo Semicon Device |
NPN Transistor • • • • • High DC current gain. Wide ASO. On-chip zener diode of 65±10V between collector and base. Uniformity in collector-to-base voltage. Large inductive load handling capability. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 1 |
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Sanyo Semicon Device |
2SC5899 • • • • Package Dimensions unit : mm 2174A [2SC5899] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1700V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN TRANSISTOR |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors • • • • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications ( ) : 2SA2098 Absolute Max |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 0.7 3 1.3 Specifications Absolute Ma |
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Sanyo Semicon Device |
CMOS LSI SINGLE-CHIP 4-BIT MICROCOMPUTER |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor • • • • • High DC current gain. Wide ASO. On-chip zener diode of 65±10V between collector and base. Uniformity in collector-to-base voltage. Large inductive load handling capability. 6.5 5.0 4 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 1 |
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Sanyo Semicon Device |
NPN Transistor • • • • Package Dimensions unit : mm 2174A [2SC5899] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1700V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Desde 2024. D4U Semiconductor.
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