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Sanyo Semicon Device |
2SC5778 High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. www.DataSheet4U.com • On-chip damper diode. • Package Dimensions unit : mm 2174A [2SC5778] 16.0 3.4 5.6 3.1 5.0 21.0 4.0 22 |
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Sanyo Semicon Device |
2SC5763 • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : C |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : C |
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Sanyo Semicon Device |
2SC5707 • • • • • Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : B |
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Sanyo Semicon Device |
2SC5793 • • • • Package Dimensions unit : mm 2174A [2SC5793] 16.0 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
2SC5709 • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • Package Dimensions unit : mm 2041A [2SC5764] 10.0 3.2 3.5 7.2 4.5 2.8 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 10A, AF70W Output Applications Large current capacitance. Wide ASO and high durability against breakdown. Adoption of MBIT process. Specifications |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
2SC5774 • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 10A, AF70W Output Applications Specifications No |
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Sanyo Semicon Device |
NPN TRANSISTOR • Package Dimensions unit : mm 2045B [2SA2039 / 2SC5706] 6.5 5.0 4 DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-sp |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : B |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • Package Dimensions unit : mm 2174A [2SC5793] 16.0 5.0 High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • • High speed. High breakdown voltage(VCBO=1600V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5778] 16.0 3.4 5.6 3.1 5.0 21.0 4.0 22.0 8.0 2.8 2.0 2 |
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Desde 2024. D4U Semiconductor.
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