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Sanyo Semicon Device |
2SC5682 • • • • Package Dimensions unit : mm 2174A [2SC5682] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 1 : Base 2 : Col |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.4 0.5 0.6 0.4 1.8 15.0 3.0 0.4 1 2 1.3 3 1.3 1 : Emitter 2 : Collector 3 |
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Sanyo Semicon Device |
2SC5611 · Low collector-to-emitter saturation voltage. · Excellent dependence of hFE on current. · High-speed switching. · Micaless package facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note * ( ) : 2SA2023 |
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Sanyo Semicon Device |
2SC5694 Adoption of MBIT process. Large current capacity. • Low collector-to-emitter saturation voltage. www.DataSheet4U.com • High-speed switching. • High allowable power dissipation. • • 1.0 4.0 1.0 3.3 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0 |
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Sanyo Semicon Device |
2SC5683 • • • • Package Dimensions unit : mm 2174A [2SC5683] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • Package Dimensions unit : mm 2174A [2SC5690] 16.0 5.0 3.4 5.6 3.1 8.0 22.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 21.0 4.0 2.8 2.0 20.4 |
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Sanyo Semicon Device |
2SC5681 • • • • Package Dimensions unit : mm 2174A [2SC5681] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
2SC5680 • • • • Package Dimensions unit : mm 2174A [2SC5680] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
2SC5689 • • • • • Package Dimensions unit : mm 2174A [2SC5689] 16.0 5.0 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 3.4 5.6 3.1 8.0 22.0 21.0 4.0 2.8 2.0 20. |
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Sanyo Semicon Device |
2SC5690 • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit : mm 2174A [2SC5690] 16.0 3.4 5.6 3.1 22.0 8.0 0.8 21.0 5.0 4.0 2.8 2. |
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Sanyo Semicon Device |
2SC5610 · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. Package Dimensions unit:mm 2041A [2SA2022/2SC5610] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifi |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low collector-to-emitter saturation voltage. · Excellent dependence of hFE on current. · High-speed switching. · Micaless package facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note * ( ) : 2SA2023 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • Package Dimensions • • 0.3 3 0.8 1.6 0 to 0.1 0.2 1 2 0.4 0.5 0.5 1.6 0.4 Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). Low-voltage operating . High gain :S2 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • Package Dimensions unit : mm 2159 [2SC5646] 1.4 • • • Low-noise use : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz). Ultraminiatur |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • Package Dimensions unit : mm 2174A [2SC5680] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • • 1.0 4.0 1.0 3.3 Adoption of MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 4.8 1 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • • • • Package Dimensions unit : mm 2174A [2SC5682] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 21.0 4.0 22.0 8.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2174 [2SC5639] 16.0 5.0 3.4 5.6 3.1 0.8 22.0 21.0 4.0 2.8 2.0 0.7 1 2 5.45 3. |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor • • Package Dimensions • Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2106A : fT=11.2GHz typ (VCE=3V). Low operating voltage. 0.3 3 [2SC5665] 0.75 0.6 0.4 0.8 0.4 1.6 0~0.1 1 2 0.5 0.5 1.6 |
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Desde 2024. D4U Semiconductor.
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