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Sanyo Semicon Device |
2SC5578 · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5578] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Abso |
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Sanyo Semicon Device |
2SC5568 · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. Specif |
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Sanyo Semicon Device |
NPN TRANSISTOR · High fT : (fT=3.5GHz typ). · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max). Package Dimensions unit:mm 2038A [2SC5551] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximu |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Large allowable collector dissipation : PC=500mW max. Package Dimensions unit:mm 2161 [2SC5501] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5506] 20.0 3.3 5.0 26.0 2.0 3.4 2.0 1.0 20.7 0.6 1.2 Specifications Absolute M |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5577] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Spec |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5578] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Abso |
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Sanyo Semicon Device |
2SC5551 · High fT : (fT=3.5GHz typ). · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max). Package Dimensions unit:mm 2038A [2SC5551] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 3 1.5 2 3.0 1 0.75 Specifications Absolute Maximum |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ. Package Dimensions unit:mm 2161 [2SC5502] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Spe |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2161 [2SC5503] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 S |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz). · High cutoff frequency : fT=11GHz typ. · Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : S21e2=6dB typ (f=1.5GHz). Pack |
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Sanyo Semicon Device |
NPN TRANSISTOR · High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ (f=1GHz). · Low noise : NF=1.3dB typ (f=1GHz). · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5540 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 0.5 3 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products. · High allowable power dissipation. 0.5 3 1.5 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.2dB typ (f=2GHz). · High gain : S21e2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ. Package Dimensions unit:mm 2161 [2SC5534] 0.65 0.65 0.3 4 3 0.425 1 2 0.6 0.65 0.5 2.0 0.425 1.25 2.1 0 to 0.1 0.2 0.15 Sp |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.8dB typ (f=150MHz). · High gain : S21e2=16dB typ (f=150MHz). · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm) Package Dimensions unit:mm 2159 [2SC5536] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specifications |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low voltage, low current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5537] 1.4 0.3 0.25 3 0.1 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High gain : S21e =10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm) 2 Package Dimensions unit:mm 2159 [2SC5538] 1.4 0.3 0.25 3 0.1 0.8 0.2 0.3 1 0.45 2 1.4 Specificat |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7.5GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5539] 1.4 0.3 0.25 3 0.1 0.8 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.2dB typ (f=2GHz). · High gain : S21e2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm) Package Dimensions unit:mm 2159 [2SC5541] 1.4 0.3 0.25 3 0.1 0.8 |
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Desde 2024. D4U Semiconductor.
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