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Sanyo Semicon Device |
2SC5303 · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximu |
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Sanyo Semicon Device |
2SC5301 |
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Sanyo Semicon Device |
2SC5302 · Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5302] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 |
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Sanyo Semicon Device |
2SC5310 · Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products. Package Dimensions unit:mm 2018B [2SA1973/2SC53 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products. Package Dimensions unit:mm 2018B [2SA1973/2SC53 |
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Sanyo Semicon Device |
2SC5388 · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5300] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications |
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Sanyo Semicon Device |
NPN TRANSISTOR · Fast speed (t f=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5302] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 2.0 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High breakdown voltage (VCBO=1200V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5305] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specificati |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (Adoption of MBIT process). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5388] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5301] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximu |
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Sanyo Semicon Device |
NPN TRANSISTOR · Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter |
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Sanyo Semicon Device |
NPN TRANSISTOR · High gain : S21e2=10dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5375] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 Specifications Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor • High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Abso |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 26.0 20.7 1.75 2.9 1.2 1 5.45 2 3 5.45 0.6 3.0 1.0 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2079D [2SC5304] 10.0 3.2 3.5 7.2 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 0.7 Specification |
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Sanyo Semicon Device |
NPN TRANSISTOR • High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :⏐S21e⏐2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter |
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Sanyo Semicon Device |
NPN TRANSISTOR · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. Package Dimensions unit:mm 2106A [2SC5374] 0.3 0.75 0.6 0 to 0.1 0.4 0.8 0.4 1.6 0.1max 0.5 0.5 1.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Param |
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Desde 2024. D4U Semiconductor.
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