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Sanyo Semicon Device |
2SC5297 · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4. |
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Sanyo Semicon Device |
2SC5291 • Adoption of FBET, MBIT processes. • Large current capacity. • Can be provided in taping. • 9.5mm onboard mounting height. Package Dimensions unit : mm 2084B [2SC5291] 10.5 4.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute |
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Sanyo Semicon Device |
2SC5298 • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC5228] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 Specifications 12 0.95 0.85 2.9 0.6 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz). |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 |
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Sanyo Semicon Device |
2SC5227 |
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Sanyo Semicon Device |
2SC5240 • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process. Package Dimensions unit: mm 2069B-SMP-FD [2SC5420] 10.2 4.5 1.3 2.7 3.0 8.8 1.2 Specifications Absolute Maximum Ratings at Ta=25°C |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. 0.425 Package Dimensions unit:mm 2059B [2SC5226] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 Specifications 0.425 12 0.65 0.65 2.0 0. |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimensions unit:mm 2018B [2SC5227] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 Specifications 1 0.95 0.95 2 1.9 2.9 0.8 1.1 |
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Sanyo Semicon Device |
NPN TRANSISTOR |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz). · |
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Sanyo Semicon Device |
NPN TRANSISTOR • • • • Package Dimensions unit : mm 2084B [2SC5291] 10.5 1.9 4.5 1.2 Adoption of FBET, MBIT processes. Large current capacity. Can be provided in taping. 9.5mm onboard mounting height. 2.6 1.4 7.5 1.2 1.6 0.5 1 2 3 1.0 8.5 0.5 Specification |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4. |
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Sanyo Semicon Device |
NPN TRANSISTOR • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. · Medium power operation : NF=1.7dB typ (f=1GHz). (VCE=8V, IC=40mA) : S21e2=11dB typ (f=1GHz). Package Dimensions unit:mm 2038 |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=6.5GHz typ. Package Dimensions unit:mm 2004B [2SC5230] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Very small-sized package permiting 2SC5231- applied sets to be made small and slim. Package Dimensions unit:mm 2106A [2SC5231] 0.3 |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5238] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications 1.75 2.9 1.2 12 |
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Desde 2024. D4U Semiconductor.
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