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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4163] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 |
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Sanyo Semicon Device |
2SC4169 |
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Sanyo Semicon Device |
2SC4160 · High breakdown voltage. · High reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4160] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA1580 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4107] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.55 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4110] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 20.0 1.4 0.6 Specifications |
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Sanyo Semicon Device |
2SC4168 · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifi |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4105] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.55 |
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Sanyo Semicon Device |
2SC4159 · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4108] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 20.0 1.4 0.6 Specifications |
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Sanyo Semicon Device |
NPN Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4123] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21 |
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Sanyo Semicon Device |
NPN Transistor |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4162] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. · Suitable for sets whose height is restricted. Package Dimensions unit:mm 2049C [2SC4172] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 9.4 0.8 0.4 Specifications 123 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.3pF typ. · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4188] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 |
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Sanyo Semicon Device |
2SC4123 · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC4123] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Desde 2024. D4U Semiconductor.
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