| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
2SC3953 |
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Sanyo Semicon Device |
2SC3998 • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte |
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Sanyo Semicon Device |
2SC3997 |
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Sanyo Semicon Device |
2SC3987 · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. · High induc |
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Sanyo Semicon Device |
PNP/NPN Transistors · High breakdown voltage. · Large current capacity. · Adoption of FBET and MBIT process. · The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902. Package Dimensions unit:mm 2042B [2SA1507/2SC3902] ( ) |
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Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3990] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec |
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Sanyo Semicon Device |
2SC3990 |
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Sanyo Semicon Device |
2SC3920 · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2003B [2SA1526/2SC3920] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 ( ) : 2SA1526 Specifications Absolute Maximum Ratings at T |
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Sanyo Semicon Device |
Silicon NPN Transistor · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. · High induc |
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Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3989] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Absolute Maximum Ratings a |
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Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3991] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL Absolute Maxim |
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Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3994] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base |
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Sanyo Semicon Device |
Silicon NPN Transistor · High speed (tf=100ns typ). · High reliability (adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3995] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
Silicon NPN Transistor · High fT : fT=500MHz. · High breakdown voltage : VCEO=120Vmin. · Small reverse transfer capacitance and excellent HF response : Cre=2.7pF/NPN, 4.0pF/PNP. · Complementary PNP and NPN types. · Adoption of FBET process. · Micaless type : TO-126 plastic |
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Sanyo Semicon Device |
Silicon NPN Transistor · High gain-bandwidth product : fT=300MHz. · High breakdown voltage : VCEO=200Vmin. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.5pF/NPN, 1.8pF/ PNP. · Complementary PNP and NPN types. · Adoption of FBET p |
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Sanyo Semicon Device |
Silicon NPN Transistor · High gain-bandwidth product : fT=300MHz. · High breakdown voltage : VCEO=200Vmin. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=2.2pF/NPN, 2.7pF/ PNP. · Complementary PNP and NPN types. · Adoption of FBET p |
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Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3992] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec |
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Sanyo Semicon Device |
2SC3996 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2003B [2SA1526/2SC3920] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 ( ) : 2SA1526 Specifications Absolute Maximum Ratings at T |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · On-chip bias resistance : R1=2.2kΩ, R2=2.2kΩ. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2003A [2SA1529/2SC3923] ( ) : 2SA1529 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collect |
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Desde 2024. D4U Semiconductor.
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