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Sanyo Semicon Device |
2SC3773 · Small noise figure : NF=3.0dB typ (f=0.9GHz). · High power gain : MAG=12dB typ (f=0.9GHz). · High cutoff frequency : fT=3.5GHz typ. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volta |
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Sanyo Semicon Device |
2SC3746 |
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Sanyo Semicon Device |
2SC3782 · High fT (fT typ=400MHz). · High breakdown voltage (VCEO≥200V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.1pF (NPN), 2.6pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process. ( ) : 2SA |
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Sanyo Semicon Device |
2SC3779 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC3750] Specifications 1 : Base 2 : Collector 3 : Emitter S |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor • High breakdown voltage and high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating mounting. Package Dimensions unit : mm 2041A 10.0 3.2 [2SC3751] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 1.6 1.2 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Adoption of FBET process. · High DC current gain. · High VEBO (VEBO≥25V). · High reverse hFE (150 typ). · Small ON resistance [Ron=1Ω (IB=5mA)] Package Dimensions unit:mm 2003B [2SC3792] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specific |
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Sanyo Semicon Device |
2SC3789 |
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Sanyo Semicon Device |
2SC3772 · Small noise figure : NF=2.5dB typ (f=0.9GHz). · High power gain : MAG=12dB typ (f=0.9GHz). · High cutoff frequency : fT=3.0GHz typ. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volta |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency cahaceteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. Package Dimensions unit:mm 2042A [2SA1478/2SC3788] ( ) : 2SA1478 Spec |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor · High DC current gain. · Large current capacityu and wide ASO. · Contains a Zener diode across collector and base. Package Dimensions unit:mm 2009B [2SC3705] JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collecto |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC3749] Specifications 1 : Base 2 : Collector 3 : Emitter S |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Small noise figure : NF=3.0dB typ (f=0.9GHz). · High power gain : MAG=12dB typ (f=0.9GHz). · High cutoff frequency : fT=3.5GHz typ. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volta |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Small noise figure : NF=2.2dB typ (f=0.9GHz). · High power gain : MAG=14dB typ (f=0.9GHz). · High cutoff frequency : fT=5.0GHz typ. Package Dimensions unit:mm 2004A [2SC3778] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT (fT typ=400MHz). · High breakdown voltage (VCEO≥200V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=2.1pF (NPN), 2.6pF (PNP). · Complementary PNP and NPN types. · Adoption of FBET process. ( ) : 2SA |
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Sanyo Semicon Device |
NPN Epitaxial Planar Type Silicon Transistor · High DC current gain. · Wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage. · Large inductive load handling capability. Package Dimensions unit:mm 2043B [2SC3785] 8.0 4.0 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · Excellent linearity of hFE. · Small Cob. · Plastic-convered heat sink facilitating high-density mounting (TO-126ML package). Package Dimensions unit:mm 2042B [2SA1477/2SC3787] 8.0 4.0 1.0 1.0 3.3 3.0 1.6 0.8 1.5 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage (VCEO≥300V). · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 |
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Sanyo Semicon Device |
2SC3747 · Low saturation votlage. · Excellent dependence of hFE on current. · Fast switching time. · Micaless package facilitating mounting. ( ) : 2SA1470 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V Package Dimensions unit:mm 2003B [2SA1450/2SC3708] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1450 Specifications Absolute Maximum Ratings at Ta |
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Desde 2024. D4U Semiconductor.
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