| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
2SC3502 · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4. |
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Sanyo Semicon Device |
2SC3504 · High fT. · Small reverse transfer capacitance. Package Dimensions unit:mm 2006A [2SC3504] EIAJ : SC-51 B : Base C : Collector E : Emitter SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV |
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Sanyo Semicon Device |
Varactor Diode · Excellent matching characteristics because of composite type. · The number of manufactuaring processes can be reduced and automatic mounting is possible because of composite type. · High capacitance ratio and high quality factor. Package Dimension |
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Sanyo Semicon Device |
2SC3503 Package Dimensions unit:mm 2009A [2SA1381/2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. · Adoption of MBIT process. JEDEC : |
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Sanyo Semicon Device |
PNP/NPN Transistors · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4. |
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Sanyo Semicon Device |
Varactor Diode · Excellent matching characteristics because of composite type. · The number of manufacturing processes can be reduced and automatic mounting is possible because of composite type. · High capacitance ratio and high quality factor. · Possible to offer |
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Sanyo Semicon Device |
PNP/NPN Transistors Package Dimensions unit:mm 2009A [2SA1381/2SC3503] · High breakdown voltage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. · Adoption of MBIT process. JEDEC : |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.6pF (NPN), 2.1pF (PNP). · Complementary pair with the 2SA1404/2SC3598. · Adoption of FBET proces |
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Sanyo Semicon Device |
NPN Transistor · High fT. · Small reverse transfer capacitance. Package Dimensions unit:mm 2006A [2SC3504] EIAJ : SC-51 B : Base C : Collector E : Emitter SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3552] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-B |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2033 [2SC3576] Specifications Absolute Maximum Ratings at Ta = |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Package Dimensions unit:mm 2010C [2SC3591] Specifica |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · High fT : fT typ=2.0GHz. · High current : IC=500mA. NPN Epitaxial Planar Silicon Transistor 2SC3595 Ultrahigh-Definition CRT Display Video Output Applications Package Dimensions unit:mm 2009B [2SC3595] Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT: fT typ=700MHz. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Complementary pair with the 2SA1402/2SC3596. · Adoption of FBET process. ( ) : 2SA1402 Specifications Absol |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT : fT typ=800MHz. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.9pF (NPN), 4.6pF (PNP). · Complementary pair with the 2SA1403/2SC3597. · Adoption of FBET procss. Package Dimensions unit:mm 2009B |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=2.5pF (NPN), 3.8pF (PNP). · Complementary pair with the 2SA1405/2SC3599. · Adoption of FBET proces |
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Sanyo Semicon Device |
Varactor Diode · Execellent matching characteristics because of composite type. · The number of manufacturing processes can be reduced and automatic mounting is possible because of composite type. · High capacitance ratio and high quality factor. Package Dimension |
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Sanyo Semicon Device |
Varactor Diode · Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic mounting supported. · High capacitance ratio and high quality factor. · Capacitance separated in RF and OSC. · Tape reel packaging. · Su |
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Desde 2024. D4U Semiconductor.
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