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Sanyo Semicon Device |
2SC3277 · High breakdown voltage, high current. · Wide ASO. · Fast switching speed. Package Dimensions unit:mm 2022A [2SC3277] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1291 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co |
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Sanyo Semicon Device |
Diffused Junction Type Silicon Diode |
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Sanyo Semicon Device |
NPN Transistor · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. · High induc |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage, high current. · Wide ASO. · Fast switching speed. Package Dimensions unit:mm 2022A [2SC3277] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to- |
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Sanyo Semicon Device |
NPN Transistor · High DC current gain. · Large current capacity and wide ASO. · Contains 60±10V Zener diode between collector and base. · Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. · 15mJ reverse energy |
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Sanyo Semicon Device |
NPN Planar Silicon Transistor · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to adoption of accurate impurity diffusion process. · High inductive lo |
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Sanyo Semicon Device |
Varactor Diode • Package Dimensions unit : mm 1303 [SVC325] 2.9 0.4 0.15 • • Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor. Surface mount type. Electrical Conne |
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Sanyo Semicon Device |
Two Wire Serial Interface EEPROM to prohibit write operations under low voltage conditions. * I2C Bus is a trademark of Philips Corporation. * This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd. Any and al |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1289 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1290 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base V |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Excellent dependence of hFE on current. · Fast switching time. ( ) : 2SA1292 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base |
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Sanyo Semicon Device |
Low-Frequency General-Purpose Amplifier Applications • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Vo |
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Sanyo Semicon Device |
Low-Frequency General-Purpose Amplifier Applications • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Vo |
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Sanyo Semicon Device |
Varactor Diode · The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of being operated from a low voltage and is intended for use in AM receiver electronic tuning applications. Package Dimensions unit:mm 1184 [SVC321S |
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Sanyo Semicon Device |
Varactor Diode · High capacitance ratio and high quality factor. · AM 1710kHz max. supported. Package Dimensions unit:mm 1184A [SVC323] 1:Anode 2:Cathode SANYO:SPA Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Reverse Voltage Junction Temperatur |
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Desde 2024. D4U Semiconductor.
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