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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1249 Specifications Absolute Maximum Ra |
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Sanyo Semicon Device |
2SC3150 · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3150] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Coll |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage. · Large current capacity. · Using MBIT process Package Dimensions unit:mm 2009B [2SA1248/2SC3116] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1248 Specifications Absolute Maximum Ratings a |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2018A [2SA1252/2SC3134] C : Collector B : Base E : Emitter ( ) : 2SA1252 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vo |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol C |
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Sanyo Semicon Device |
2SC3149 · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3149] JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t |
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Sanyo Semicon Device |
2SC3114 · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · FBET series. · Compact package enabling compactness of sets. · High fT and small cre (fT=750MHz typ, cre=0.6 typ). Package Dimensions unit:mm 2018A [2SC3142] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-B |
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Sanyo Semicon Device |
2SC3117 · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. 1.6 0.8 0.8 0.6 3.0 1.5 3.0 7.0 11.0 15.5 0.5 ( ) : 2SA1249 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collec |
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Sanyo Semicon Device |
PNP/NPN Transistors · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1258 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle |
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Sanyo Semicon Device |
PNP/NPN Transistors · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1259/2SC3145] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1259 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3151] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Ba |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3153] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to- |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3183] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
2SC3143 · Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim. · High breakdown voltage (VCEO≥160V). · Small output capacitance. Package Dimensions unit:mm 2018B [2SA1257/2SC3143] 0.4 3 0.16 0 to 0.1 1.5 0.5 2. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim. · High breakdown voltage (VCEO≥160V). · Small output capacitance. Package Dimensions unit:mm 2018B [2SA1257/2SC3143] 0.4 3 0.16 0 to 0.1 1.5 0.5 2. |
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Sanyo Semicon Device |
NPN Transistor · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3149] JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SC3184] Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
Low-Frequency General-Purpose Amplifier Applications • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Vo |
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Desde 2024. D4U Semiconductor.
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