| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
NPN Transistor |
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Sanyo Semicon Device |
NPN Transistor |
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Sanyo Semicon Device |
Varactor Diode • • Package Dimensions unit : mm 1184 [SVC222] 4.0 3.0 Guaranteed matching to 4.0% at VR=2V. High Q. 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2.6 2 1 : Anode 2 : Cathode SANYO : SPA Ratings 16 125 −55 to +125 Unit V °C °C 0.7 Specifications Abs |
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Sanyo Semicon Device |
Varactor Diode • • Package Dimensions unit : mm 1184 [SVC224] 4.0 3.0 High capacitance ratio. Best suited for VCO use. 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2.6 2 1 : Anode 2 : Cathode SANYO : SPA Ratings 16 125 −55 to +125 Unit V °C °C 0.7 Specifications |
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Sanyo Semicon Device |
NPN Transistor |
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Sanyo Semicon Device |
Varactor Diode • Package Dimensions unit : mm 1148A [SVC221] • • • 0.5 Very small package facilitates miniaturization in end products. Since shipment in tape reel packing is available, automatic insertion is supported. High Q. Guaranteed matching to 4.0% at VR |
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Sanyo Semicon Device |
Varactor Diode • • Package Dimensions unit : mm 1184 [SVC226] 4.0 3.0 2.2 High capacitance ratio. Uniform capacitance-voltage characteristic provided diode to be used in combination. 0.4 0.5 0.6 0.4 1.8 15.0 0.4 1 2.6 2 1 : Anode 2 : Cathode SANYO : SPA Sp |
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Desde 2024. D4U Semiconductor.
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