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Sanyo Semicon Device |
Three-Phase Brushless Motor Driver • • • • • • • Direct PWM drive output Speed discriminator + PLL speed control circuit Speed lock detection output Built-in crystal oscillator circuit Forward/reverse switching circuit Braking circuit (short braking) Full complement of on-chip protect |
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Sanyo Semicon Device |
2SB1143 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. 1.6 0.8 1.4 4.0 1.0 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Col |
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Sanyo Semicon Device |
2SB1140 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
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Sanyo Semicon Device |
2SB1134 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.4V max/IC=( –)3A, IB=( –)0.3A. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications |
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Sanyo Semicon Device |
Single-Phase Full-Wave Fan Motor Driver • Single-phase full-wave drive (16V, 1.0A transistors are built in) • Built-in variable speed function controlled by a thermistor input The LB11961 can implement quiet, low-vibration variable speed control using externally clocked high side transisto |
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Sanyo Semicon Device |
2SB1144 · Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density mounting. Package Dimensions unit:mm 2042B [2SB1144/2SD1684] ( ) : 2SB1144 1 : Emitter 2 : Collector 3 |
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Sanyo Semicon Device |
3-phase sensor less Motor driver a current soft switching circuit and be optimal for driving the cooling fan motors used in refrigerators, etc. Functions • Three-phase full-wave linear drive (Hall sensor-less method ) • Built-in three-phase output voltage control circuit • Built-in |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Co |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
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Sanyo Semicon Device |
Single-Phase Full-Wave Fan Motor Driver %& ' %& ' )* $ % % |
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Sanyo Semicon Device |
Monolithic Digital IC • 3-phase full-wave current linear drive. • Torque ripple correction circuit (fixed correction ratio). • Current limiter circuit with control characteristics gain switching. • Output stage upper/lower oversaturation prevention circuit (No external ca |
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Sanyo Semicon Device |
PNP Transistor · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( ) : 2SB1119 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector- |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Large current capacity and wide ASO. · Fast switching speed. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. [2SB1121/2SD1621] E |
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Sanyo Semicon Device |
PNP Transistor · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.4V max/IC=( –)3A, IB=( –)0.3A. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications |
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Sanyo Semicon Device |
PNP Transistor · Low saturation voltage and excellent linearity of hFE. · Wide ASO. Package Dimensions unit:mm 2042A [2SB1141/2SD1681] ( ) : 2SB1141 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter V |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. ( ) : 2SB1142 B : Base C : Collector E : Emitter SANYO : TO-126ML Conditions Ratings ( –)60 ( –)50 ( –)6 ( –)2.5 ( –)5.0 1.5 Unit V V V A A W W Specifi |
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Sanyo Semicon Device |
3-Phase Sensorless Motor Driver atings 15.0 15.0 -0.3 to VCC+0.3 1.0 0.5 1.0 -30 to +85 -55 to +150 Unit V V V A W W °C °C Independent IC Mounted on a specified board.* Conditions Ratings 7 to 13.8 Unit V w w w .D a S a t e e h U 4 t m o .c O3005 MS PC B8-7113 No.879 |
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Sanyo Semicon Device |
Monolithic Digital IC Three-Phase Brushless Motor Driver y voltage Output current Allowable power dissipation 1 Allowable power dissipation 2 Operating temperature Storage temperature Symbol VCC max IO max Pd max1 Pd max2 Topr Tstg UH, VH, WH, UL, VL, WL output Independent IC Mounted on a circuit board* Co |
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Sanyo Semicon Device |
Monolithic Digital IC rocontrollers Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Supply voltage Output current Allowable power dissipation 1 Allowable power dissipation 2 Symbol VCC max IO max Pd max1 Pd max2 T ≤ 500ms Independent IC When mounted on a c |
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Sanyo Semicon Device |
Brushless Motor Predriver IC rmal protection circuit • Speed control circuit Applications Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Supply voltage Output Circuit current Allowable power dissipation Operating temperature Storage temperature Symbol VCC max IO |
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Desde 2024. D4U Semiconductor.
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