Sanyo Semicon Device 6SV Hoja de datos

No.	parte #	Fabricante	Descripción
1	6SVP100M	Sanyo Semicon Device	OS-CON SVP series 200 180 160 140 120 100 80 60 40 20 0 10000 Leakage current (6.3V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions :
2	6SVP470M	Sanyo Semicon Device	Frequency characteristics Hz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (6.3V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S=Vapor Phase Solderin
3	OS-CON16SVP100M	Sanyo Semicon Device	SVP series 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 230deg
4	6SVP47M	Sanyo Semicon Device	OS-CON Hz) 200 180 160 140 120 100 80 60 40 20 0 10000 Leakage current (6.3V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test condition
5	16SVP100M	Sanyo Semicon Device	SVP series 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions : 230deg
6	16SVP330M	Sanyo Semicon Device	SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde
7	OS-CON16SVP330M	Sanyo Semicon Device	SVP series 0kHz) 100 90 80 70 60 50 40 30 20 10 0 10000 Leakage current (16V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. V.P.S test conditions : 230deg.C×75s×2times (V.P.S = Vapor Phase Solde
8	OS-CON6SVP100M	Sanyo Semicon Device	OS-CON SVP series 200 180 160 140 120 100 80 60 40 20 0 10000 Leakage current (6.3V 60s) Leakage current(µA) 1000 100 10 1 0.1 0.01 ESR(mohm) 0 2000 0 2000 Time[h] Time[h] Note: n =30p. (V.P.S = Vapor Phase Soldering method) Note: V.P.S test conditions :