| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te |
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Sanyo Semicon Device |
High-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery |
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Desde 2024. D4U Semiconductor.
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