| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
Cell Type N-50AAA 6 Discharge (at high rate) Change : 5mA×16Hrs. at 20˚C/68˚F 1.4 Cell Voltage (V) 1.5 0.3C 0.1C Cell Voltage (V) 1.2 1.4 1.0 1.3 0 20 40 60 80 100 120 140 160 0.8 0 2 4 (8C) 6 8 10 (4C) 12 14 16 Charge Input (%) Discharge Time (Mins) D |
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Sanyo Semicon Device |
Cell Type N-50AAA 6 Discharge (at high rate) Change : 5mA×16Hrs. at 20˚C/68˚F 1.4 Cell Voltage (V) 1.5 0.3C 0.1C Cell Voltage (V) 1.2 1.4 1.0 1.3 0 20 40 60 80 100 120 140 160 0.8 0 2 4 (8C) 6 8 10 (4C) 12 14 16 Charge Input (%) Discharge Time (Mins) D |
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Sanyo Semicon Device |
50A02SP |
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Sanyo Semicon Device |
Low-Frequency General-Purpose Amplifier Applications • • • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]. Small ON-resistance (Ron). 1 0.4 0.6 3 0.05 1.6 2.8 2 1.9 0.6 0.7 0.9 1 : Base 2 : Emitter 3 : Collector SANYO |
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Sanyo Semicon Device |
Low-Frequency General-Purpose Amplifier Applications • • • • 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current ( |
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Desde 2024. D4U Semiconductor.
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