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Sanyo Semicon Device |
2SC5303 · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2111A [2SC5303] 20.0 5.0 20.7 26.0 2.8 3.0 2.0 Specifications Absolute Maximu |
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Sanyo Semicon Device |
2SC5578 · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC5578] 6.0 20.0 3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 Specifications Abso |
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Sanyo Semicon Device |
2SC4460 · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4460] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 |
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Sanyo Semicon Device |
2SC5888 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications ( ) : 2SA2099 Absolute Maximum Ratings at |
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Sanyo Semicon Device |
2SC5778 High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. www.DataSheet4U.com • On-chip damper diode. • Package Dimensions unit : mm 2174A [2SC5778] 16.0 3.4 5.6 3.1 5.0 21.0 4.0 22 |
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Sanyo Semicon Device |
2SC4429 · High breakdown voltage, high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039D [2SC4429] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22 |
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Sanyo Semicon Device |
2SC5297 · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 |
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Sanyo Semicon Device |
2SC2078 0V, f=1MHz IC=1A, IB=0.1A IC=1A, IB=0.1A 10 µA 10 µA 25* 200* 100 150 MHz 45 60 pF 0.15 0.6 V 0.9 1.2 V * : The 2SC2078 are classified by 0.5A hFE as follows : 25 B 50 40 C 80 60 D 120 100 E 200 Any and all SANYO products described or conta |
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Sanyo Semicon Device |
2SC5763 • • • • • Package Dimensions unit : mm 2010C [2SC5763] 10.2 3.6 5.1 2.7 6.3 High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. 4.5 1.3 18.0 5.6 1.2 14.0 0.8 1 2 3 2.7 15.1 0.4 1 : Base 2 : C |
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Sanyo Semicon Device |
2SC6082 • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Coll |
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Sanyo Semicon Device |
2SC930 |
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Sanyo Semicon Device |
Silicon NPN Transistor · Adoption of FBET, MBIT processes. · High voltage and large current capacity. · Fast switching time. · Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1552/2SC4027] 6 |
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Sanyo Semicon Device |
2SC3953 |
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Sanyo Semicon Device |
2SC3773 · Small noise figure : NF=3.0dB typ (f=0.9GHz). · High power gain : MAG=12dB typ (f=0.9GHz). · High cutoff frequency : fT=3.5GHz typ. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volta |
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Sanyo Semicon Device |
2SC3998 • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte |
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Sanyo Semicon Device |
2SC3746 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1249 Specifications Absolute Maximum Ra |
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Sanyo Semicon Device |
2SC5682 • • • • Package Dimensions unit : mm 2174A [2SC5682] 16.0 3.4 5.6 3.1 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. 5.0 2.8 2.0 20.4 0.7 0.9 1 2 5.45 3 1 : Base 2 : Col |
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Sanyo Semicon Device |
2SC3997 |
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Sanyo Semicon Device |
2SC3502 · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4. |
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Desde 2024. D4U Semiconductor.
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