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Sanyo Semicon Device |
2SA1207 · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of h FE and small C ob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Sp |
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Sanyo Semicon Device |
2SA1704 · Adoption of FBET, MBIT processes. · Low collector-to-emitter voltage. · Large current capacity and wide ASO. · Fast switching speed. ( ) : 2SA1704 E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25˚ |
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Sanyo Semicon Device |
2SA2210 • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
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Sanyo Semicon Device |
2SA2037 • • • • • 1.0 4.0 1.0 3.3 Adoption of MBIT process. Large current capacity. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 4.8 1 |
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Sanyo Semicon Device |
2SA2169 • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · On-chip bias resistance : R1=2.2kΩ, R2=10kΩ. · Small-sized package : CP. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2018A [2SA1520/2SC3914] ( ) : 2SA1520 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collect |
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Sanyo Semicon Device |
2SA1770 · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at T |
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Sanyo Semicon Device |
2SA1016 960 123 1.3 1.3 1 : Emitter 2 : Collecor 3 : Base SANYO : NP 2SA1016, 2SC2362 ( –)120 ( –)100 2SA1016K, 2SC2362K ( –)150 ( –)120 ( –)5 ( –)50 ( –)100 400 125 –55 to +125 Unit V V V mA mA mW ˚C ˚C Ratings min typ max Unit ( –)1.0 µA ( –)1.0 µA 160* |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · Large current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 3 ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≤200V. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 3 0.5 |
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Sanyo Semicon Device |
2SA1606 · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · High fT (230MHz typ.) and small Cre (1.1 pF typ.). · Small NF (2.5dB typ.). 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volt |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1703/2SC4483] ( ) : 2SA1703 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · Excellent dependence of hFE on current. · High-speed switching. · Micaless package facilitating mounting. 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note * ( ) : 2SA2023 |
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Sanyo Semicon Device |
2SA1208 · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed. Package Dimensions unit:mm 2006A [2SA1208/2SC2910] ( ) : 2SA1208 Specifications EIAJ:SC-51 SANYO:MP B:Base C:Collector E:Emit |
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Sanyo Semicon Device |
2SA1824 · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. ( ) : 2SA1824 E : Emitter C : Collector B : Base SANYO : FLP Specifications Absolute Maximum Ratings at |
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Sanyo Semicon Device |
2SA1526 · On-chip bias resistance : R1=10kΩ, R2=10kΩ. · Large current capacity : IC=500mA. Package Dimensions unit:mm 2003B [2SA1526/2SC3920] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 ( ) : 2SA1526 Specifications Absolute Maximum Ratings at T |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Desde 2024. D4U Semiconductor.
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