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Sanyo |
Schottky Barrier Diode • Tj=150°C. • Low forward voltage (VF max=0.88V). • Short reverse recovery time. • Low switching noise. • High reliability due to highly reliable planar structure. • Attachment workability is good by Mica-less package. Specifications Absolute Maximu |
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Sanyo Semicon Device |
Schottky Barrier Diode 100V 25A Rectifier • • • • Low reverse current. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Vo |
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Sanyo Semicon Device |
Schottky Barrier Diode 100V 25A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.80V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolu |
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Sanyo |
Schottky Barrier Diode • Tj=150°C. • Low forward voltage (VF max=0.88V). • Short reverse recovery time. • Low switching noise. • High reliability due to highly reliable planar structure. • Attachment workability is good by Mica-less package. Specifications Absolute Maximu |
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Sanyo Semicon Device |
Schottky Barrier Diode • • • • Small reverse current (IR typ=10µA) due to adoption of MRJ (Multi Refined PN Junction) structure. Low forward voltage (VF typ=0.48V). High temperature operation is possible (Tj=150°C). High surge breakdown voltage. Specifications Absolute M |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 0.5A Rectifier • • • Low Switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultrasmall package permitting SB0503SH applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C (Value pe |
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Sanyo |
Schottky Barrier Diode • Tj=150°C. • Short reverse recovery time. • Low switching noise. • High reliability due to planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Aver |
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Sanyo |
Schottky Barrier Diode • Small Switching noise • Low forward voltage (IF=2A, VF max=0.40V) • Small package permitting applied sets to be small and slim Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Repetitive Peak Reverse Voltage Nonrepetitive Pea |
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Sanyo Semicon Device |
Schottky barrier diode |
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Sanyo Semicon Device |
Schottky barrier diode |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with an N-channel silicon MOSFET (SCH1406) and a Schottky barrier diode (SBS018) contained in one package facilitating hi |
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Sanyo Semicon Device |
Schottky Barrier Diode 60V 15A Rectifier • • • • • • Tj=150°C. Low forward voltage (VF max=0.58V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolute Maximum Rating |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 25A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specificatio |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 25A Rectifier • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetit |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 200mA Rectifier • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultraminiature (1608 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak |
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Sanyo Semicon Device |
Low IR Schottky Barrier Diode 30V 0.5A Rectifier • • • Low switching noise. Low leakage current and high reliability due to planar structure. Ultraminiature (1008 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage |
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Sanyo Semicon Device |
Schottky Barrier Diode 90V 0.5A Rectifier • • • Fast reverse recovery time (trr max=20ns). Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Repetitive Peak |
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Sanyo Semicon Device |
Schottky Barrier Diode 30V 1.0A Rectifier • • Low switching noise. Low reverse current (VR=16V, IR max=15μA). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current J |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=115mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Vo |
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Desde 2024. D4U Semiconductor.
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