| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo |
Schottky Barrier Diode • Tj=150°C. • Low forward voltage (VF max=0.88V). • Short reverse recovery time. • Low switching noise. • High reliability due to highly reliable planar structure. • Attachment workability is good by Mica-less package. Specifications Absolute Maximu |
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Sanyo Semicon Device |
Schottky Barrier Diode 100V 25A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.80V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolu |
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Sanyo |
Schottky Barrier Diode • Tj=150°C. • Low forward voltage (VF max=0.88V). • Short reverse recovery time. • Low switching noise. • High reliability due to highly reliable planar structure. • Attachment workability is good by Mica-less package. Specifications Absolute Maximu |
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Sanyo Semicon Device |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS |
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Sanyo Semicon Device |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS • High output voltage and wide bandwidth make the VPS10 optimal for use in f H (horizontal deflection frequency) = 85 kHz class color monitors. (f = 100 MHz –3 dB at VOUT = 50 Vp-p) • SIP molded 15-pin package with three channels in a single package. |
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Sanyo |
Schottky Barrier Diode • Tj=150°C. • Short reverse recovery time. • Low switching noise. • High reliability due to planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Aver |
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Sanyo Semicon Device |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS |
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Sanyo Semicon Device |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS |
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Sanyo Semicon Device |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS |
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Sanyo Semicon Device |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS |
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Sanyo Semicon Device |
HYBRID INTERGRATED CIRCUITS/WITH FBET/LSBT PROCESSS CHIPS/WIDE BANDWIDTH VIDEO OUTPUT ICS |
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Sanyo Semicon Device |
Schottky barrier diode |
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Sanyo Semicon Device |
Schottky barrier diode |
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Sanyo Semicon Device |
Schottky Barrier Diode 60V 15A Rectifier • • • • • • Tj=150°C. Low forward voltage (VF max=0.58V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Micaless package facilitating easy mounting. Specifications Absolute Maximum Rating |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 25A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specificatio |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 25A Rectifier • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetit |
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Sanyo Semicon Device |
100V/ 15A |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 15A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Short reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Attachment workability is good by Mica-less package. Specificatio |
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Sanyo Semicon Device |
Schottky Barrier Diode 40V 15A Rectifier • • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.55V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Surface mount type device reducing the assembling time and facilita |
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Sanyo Semicon Device |
Schottky Barrier Diode 60V 15A Rectifier • • • • • • Tj=150°C. Low forward voltage (VF max=0.58V). Fast reverse recovery time. Low switching noise. High reliability due to planar structure. Micaless package facitating easy mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parame |
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Desde 2024. D4U Semiconductor.
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