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Sanyo Semicon Device |
N-Channel MOSFET · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2083B [2SK2976] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 0.8 1.6 1.2 7.5 0.5 1 2 3 0.6 5.5 7.0 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 2092B [2SK2976] 6.5 5.0 4 2.3 1.5 0 |
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Sanyo Semicon Device |
2SK2969 · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2969] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2909] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Sourc |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.0 6.2 5.2 7.8 0.7 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2078B [2SK2977LS] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to |
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Sanyo |
2SK2919 · Low ON resistance. · Ultrahigh-speed switching. · On-chip high-speed diode (trr=100ns). Package Dimensions unit:mm 2128 [2SK2919] 8.2 7.8 6.2 3 0.6 4.2 0.4 0.2 1.2 8.4 10.0 0.7 12 1.0 1.0 2.54 2.54 5.08 10.0 6.0 2.5 Specifications Absolute |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2911] 0.5 0.4 3 0.16 0 to 0.1 1 0.95 0.95 2 1.9 2.9 0.8 1.1 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • Package Dimensions unit : mm 2062A [2SK2951] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Ma |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2091A [2SK2969] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Sourc |
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Desde 2024. D4U Semiconductor.
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