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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2063A [2SK1896] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2. |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1897] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 A |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1898-applied equipment. · High density surface mount appli |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the assembling time for 2SK1899- applied equipment. · High-density surface mount applications. · Small si |
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Sanyo |
2SK1840 · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2024B [2SK1840] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltag |
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Sanyo |
2SK1898 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1898-applied equipment. · High density surface mount appli |
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Sanyo |
2SK1890 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1890-applied equipment. · High-density surface mount appli |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1847] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain- |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1848] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbo |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1891-applied equipment. · High density surface mount appli |
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Sanyo Semicon Device |
UHF Amp/Mixer Applications |
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Sanyo |
2SK1886 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1886] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 A |
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Sanyo |
2SK1889 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the assembling time for 2SK1899- applied equipment. · High-density surface mount applications. · Small si |
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Sanyo |
2SK1895 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1895] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 A |
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Sanyo |
2SK1891 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1891-applied equipment. · High density surface mount appli |
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Sanyo |
2SK1888 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK1888] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications 2.55 A |
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Sanyo |
2SK1849 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1849] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain- |
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Sanyo |
2SK1848 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1848] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbo |
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Sanyo Semicon Device |
N-Channel Enhancement Silicon MOSFET · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2024B [2SK1840] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltag |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Surface mount type device making the following possible. · Reduction in the number of manufacturing pro- cesses for 2SK1890-applied equipment. · High-density surface mount appli |
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Desde 2024. D4U Semiconductor.
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