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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1730 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1730] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1. |
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Sanyo |
2SK1725 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1725 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1725] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1. |
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Sanyo |
2SK1735 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1735] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications 2.5 Ab |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1729 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1729] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1. |
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Sanyo Semicon Device |
N-Channel Junction Silicon FET · Adoption of FBET process. · Largeyfs. · Small Ciss. · Small-sized package permitting 2SK1740-applied sets to be made small and slim. Package Dimensions unit:mm 2050A [2SK1740] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specif |
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Sanyo Semicon Device |
N-Channel Junction Silicon FET |
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Sanyo |
2SK1726 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1726] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 |
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Sanyo |
2SK1731 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1731] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications 2.5 Ab |
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Sanyo |
2SK1738 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1738] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute |
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Sanyo |
2SK1740 • Adoption of FBET process. • Large yfs. • Small Ciss • Small-sized package permitting 2SK1740-applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1727 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1727] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1. |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1732] 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 1 2 3 0.5 Specifications |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1737] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications 2.5 Abs |
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Sanyo |
2SK1724 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1724] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 S |
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Sanyo |
2SK1727 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1727 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1727] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1. |
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Sanyo |
2SK1737 · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1737] 4.5 10.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications 2.5 Abs |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1724] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 S |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1725 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1725] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1. |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1726] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1728 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1728] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 |
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Desde 2024. D4U Semiconductor.
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