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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low co |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1455/2SD2203] ( ) : 2SB1455 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-2 |
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Sanyo Semicon Device |
2SD2251 |
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Sanyo Semiconductor |
SVPD Series Capacitors ess than an initial standard 125°C, 2,000h, Rated tanδ Endurance 2 times or less than an initial standard voltage applied ESR Leakage current Below an initial standard Within ±20% ∆C/C 85°C, 85 to 90% RH, 2 times or less than an initial standard tanδ |
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Sanyo Semiconductor |
SVPD Series Capacitors ess than an initial standard 125°C, 2,000h, Rated tanδ Endurance 2 times or less than an initial standard voltage applied ESR Leakage current Below an initial standard Within ±20% ∆C/C 85°C, 85 to 90% RH, 2 times or less than an initial standard tanδ |
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Sanyo |
2SD2218 · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1467/2SD2218] ( ) : 2SB1467 Specifications 1 : Base 2 : |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipment. · Low co |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of 2SB1452/2SD2201-applied equipment. · Low co |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · High DC current gain. · Large current capacity and wide ASO. Package Dimensions unit:mm 2049B [2SB1471/2SD2223] ( ) : 2SB1471 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collect |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1507/2SD2280] ( ) : 2SB1507 Specifications E : |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1508/2SD2281] ( ) : 2SB1508 Spec |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1511/2SD2285] ( ) : 2SB1511 Specifications E : Emit |
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Sanyo |
2SD2219 · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1468/2SD2219] ( ) : 2SB1468 Specifications 1 : Base 2 : |
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Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of 2SB1452/2SD2201-applied equipment. · Low co |
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Sanyo |
2SD2202 · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1454/2SD2202] ( ) : 2SB1454 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-2 |
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Sanyo Semicon Device |
0.2W Zener Diodes · Reference voltage use. · Votlage regulators use. · Power dissipation : P=200mW. · Voltage range : ±2.5% subdivided. · High reliability due to planar type. · Ideally suited for use in hybrid ICs because of ultra small package. Package Dimensions un |
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Sanyo Semicon Device |
PNP/NPN Transistors · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1468/2SD2219] ( ) : 2SB1468 Specifications 1 : Base 2 : |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Darlington connection. · High DC current gain. · DC current gain is less affected by temperature. · Small-sized package. 0.4 3 1.5 0.5 2 3.0 0.75 1 1.0 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V max. · Wide ASO and highly registant to breakdown. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039A [2SB1509/2SD2282] ( ) : 2SB1509 Specifications E : Em |
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Desde 2024. D4U Semiconductor.
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