| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo |
Ultrahigh-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery tim |
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Sanyo |
2SD2050 |
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Sanyo Semicon Device |
Damper Diode for Very High-Definition Display Applications |
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Sanyo |
2SD2093 · High DC current gain. · Large current capacity and large ASO. · Low saturation volatage. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039A [2SB1388/2SD2093] ( ) : 2SB1388 Specifications Absolute Maximum Ratings at Ta = 2 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Contains input resistance (R1), base-to-emitter resistance (RBE). · Contains diode between collector and emitter. · Low saturation voltage. · Large current capacity. · Small-sized package making it easy to provide highdensity, small-sized hybrid IC |
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Sanyo Semicon Device |
X Band VCO / PLO • High Q. • High capacitance ratio. Package Dimensions unit: mm 1274 [SVD202] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Rectified Current Allowable Power Dissipation Junction Te |
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Sanyo Semicon Device |
FTD2017M • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Drain common specifications. Specifications Absolute Maximum R |
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Sanyo |
High-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=300V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by |
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Sanyo |
Ultrahigh-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation. Fast reverse recovery time |
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Sanyo |
Ultrahigh-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode High breakdown voltage (VRRM=600V). High reliability. Easy to be mounted, good heat dissipation. Fast reverse recovery time. Low noise at the time of reverse recovery. Spec |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2013] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
Load Switching Applications · Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2019] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
NPN Transistor · With Zener diode (11±3V) between collector and base. · Large current capacity. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting the 2SD2028applied sets to be made small and slim. Package Dimensions unit:mm 2018B |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor · Suitable for sets whose height is restricted. · High DC current gain. · Large current capacity and wide ASO. Package Dimensions unit:mm 2049C [2SD2048] 10.2 4.5 1.3 1.6 0.9 20.9 11.5 1.2 11.0 8.8 9.4 0.8 0.4 Specifications Absolute Maximu |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Darlington Transistor · Suitable for sets whose height is restricted. · High DC current gain. · Large current capacity and wide ASO. 20.9 11.5 Package Dimensions unit:mm 2049C [2SD2049] 10.2 1.2 1.6 0.9 4.5 1.3 11.0 8.8 9.4 0.8 0.4 Specifications Absolute Maximum |
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Sanyo Semicon Device |
X Band VCO / PLO • High Q. • High capacitance ratio. Package Dimensions unit: mm 1274 [SVD201] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Rectified Current Allowable Power Dissipation Junction Te |
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Sanyo Semicon Device |
Low VF Switching Diode • • • Diffused Junction Silicon Diode Low VF Switching Diode VF=1.4V max. (IF=20A) VRRM=600V trr=60ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current |
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Sanyo |
High-Speed Switching Diode • • • • • Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by |
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Sanyo |
Ultrahigh-Speed Switching Diode • • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.75V max (IF=20A) VRRM=600V trr=21ns (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Ou |
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Sanyo |
Ultrahigh-Speed Switching Diode • • • Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VF=1.3V max. (IF=20A) VRRM=300V trr=20ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Non-repeated Peak Reverse Surge Volt |
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Desde 2024. D4U Semiconductor.
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