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Sanyo |
2SC4365 · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) Package Dimensions unit:mm 2018B [2SC4365] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maxi |
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Sanyo |
2SC4399 · High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 |
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Sanyo |
2SC4364 · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA) Package Dimensions unit:mm 2018B [2SC4364] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maxim |
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Sanyo |
2SC4306 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. · Small and slim package making it easy to make 2SC4306-used set smaller. Package Dimensions unit:mm 2045B [2SC4306] 6.5 5.0 4 2.3 0.5 |
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Sanyo |
SILICON POWER TRANSISTOR |
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Sanyo |
2SC4390 • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parame |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor • Adoption of MBIT process. • High DC current gain (hFE=800 to 3200). • Large current capacity (IC=2A). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parame |
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Sanyo |
SILICON POWER TRANSISTOR |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. · Small and slim package making it easy to make 2SC4306-used set smaller. Package Dimensions unit:mm 2045B [2SC4306] 6.5 5.0 4 2.3 0.5 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=11dB typ (VCE=3V, IC=3mA) : NF=3.0dB typ (VCE=3V, IC=3mA) Package Dimensions unit:mm 2018B [2SC4364] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maxim |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Low-voltage operation : fT=3.0GHz typ (VCE=3V) : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA) Package Dimensions unit:mm 2018B [2SC4365] 0.4 3 0.16 0~0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maxi |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · High power gain : PG=25dB typ (f=100MHz). · Ultrasmall-sized package permitting the 2SC4399- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SC4399] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 |
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Sanyo |
PicomosFET Series • • • Package Dimensions unit : mm 2197 [EC4301C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 0.05 4 0.6 1.0 2 1 0.3 0.05 (Bottom view) 0.3 0.05 0.2 0.05 0.2 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : E-CSP1008-4 |
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Sanyo |
PicomosFET Series • • • Package Dimensions unit : mm 2197 [EC4302C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 3 0.05 4 0.6 1.0 2 1 0.3 0.05 (Bottom view) 0.3 0.05 0.2 0.05 0.2 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : E-CSP1008-4 |
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Sanyo |
PicomosFET Series • • • Package Dimensions unit : mm 2197 [EC4303C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3 0.05 4 0.6 1.0 2 1 0.3 0.05 (Bottom view) 0.3 0.8 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Sour |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
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Sanyo Semiconductor |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
General Purpose Switching Device Applications • • • General-Purpose Switching Device Applications Low ON-resistance. 1.8V drive. mounting height : 0.4mm. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curren |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications • • General-Purpose Switching Device Applications 1.5V drive. Halogen Free compliance (UL94 HB). Specifications www.DataSheet4U.com Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dra |
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Desde 2024. D4U Semiconductor.
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