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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2. |
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Sanyo Semiconductor Corporation |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18 |
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Sanyo Semiconductor |
2SC4108 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2022A [2SC4108] 2.6 3.5 15.6 14.0 3.2 4.8 2.0 1.6 1.3 1.2 15.0 20.0 2.0 20.0 1.4 0 |
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Sanyo |
2SC4107 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4107] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.55 |
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Sanyo |
2SC4110 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4110] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 20.0 1.4 0.6 Specifications |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4106] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2. |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4163] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 |
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Sanyo Semiconductor |
2SC4109 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4109] 2.6 3.5 15.6 14.0 3.2 4.8 2.0 1.6 1.3 1.2 15.0 20.0 2.0 20.0 1.4 0.6 1.0 1 0.6 2 3 1. |
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Sanyo Semicon Device |
2SC4169 |
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Sanyo Semicon Device |
2SC4160 · High breakdown voltage. · High reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4160] 10.0 3.2 3.5 7.2 4.5 2.8 18.1 16.0 |
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Sanyo |
2SC4105 · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4105] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.55 |
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Sanyo |
2SC4163 · High breakdown voltage and high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4163] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA1580 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2010C [2SC4107] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 Specifications 0.8 123 2.55 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC4110] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 20.0 1.4 0.6 Specifications |
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Sanyo |
2SC4162 · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4162] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 |
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Sanyo |
2SC4113 20 V, 500 mA, Low Noise LDO Regulator with Soft Start ADP7105 TYPICAL APPLICATION CIRCUITS VIN = 8V CIN + 1µF VIN VOUT SENSE ON OFF 100k Ω 100k Ω + COUT 1µF VOUT = 5V Input voltage range: 3.3 V to 20 V Maximum output current: 500 mA Low noise: 15 µ |
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Sanyo Semicon Device |
2SC4168 · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifi |
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Sanyo |
2SC4104 · High fT. · Small reverse transfer capacitance. · Adoption of FBET process. Package Dimensions unit:mm 2018A [2SA1580/2SC4104] ( ) : 2SA1580 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Em |
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Sanyo |
2SC4135 · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1593/2SC |
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Desde 2024. D4U Semiconductor.
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