| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Sanyo Semicon Device |
Silicon NPN Transistor · Adoption of FBET, MBIT processes. · High voltage and large current capacity. · Fast switching time. · Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1552/2SC4027] 6 |
|
|
|
|
Sanyo |
2SC4003 • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector |
|
|
|
|
Sanyo Semicon Device |
2SC4002 · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector |
|
|
|
|
Sanyo |
2SC4005 · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 50±8V between collector and base. · Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. · Large inductive load handling |
|
|
|
|
Sanyo |
NPN Epitaxial Planar Silicon Transistors |
|
|
|
|
Sanyo Semicon Device |
Silicon NPN Transistor · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 50±8V between collector and base. · Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. · Large inductive load handling |
|
|
|
|
Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage (VCEO min=900V). · Small Output Capacitance (Cob typ=2.0pF). · Wide ASO (adoption of MBIT process). · High reliability (adoption of HVP process). Package Dimensions unit:mm 2049C [2SC4030] 10.2 0.9 4.5 1.3 11.5 20.9 1.6 |
|
|
|
|
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
|
|
|
Sanyo Semiconductor Corporation |
2SC4027 · Adoption of FBET, MBIT processes. · High voltage and large current capacity. · Fast switching time. · Small and slim package permitting 2SA1522/ 2SC4027-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1552/2SC4027] 6 |
|
|
|
|
Sanyo |
2SC4006 · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 50±8V between collector and base. · Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. · Large inductive load handling |
|
|
|
|
Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 5.0 0.45 0.5 0.45 0.6 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-t |
|
|
|
|
Sanyo Semicon Device |
Silicon NPN Transistor · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 50±8V between collector and base. · Uniformity in collector-to-base breakdown voltage due to accurate impurity diffusion process. · Large inductive load handling |
|
|
|
|
Sanyo Semicon Device |
Silicon NPN Transistor · High breakdown voltage (VCEO min=900V). · Small Output Capacitance (Cob typ=1.6pF). · Wide ASO (adoption of MBIT process). · High reliability (adoption of HVP process). Package Dimensions unit:mm 2049C [2SC4031] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 2 |
|
|
|
|
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · Highly resistant to breakdown and wide ASO. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4075] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : |
|
|
|
|
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT. · High breakdown voltage. · Small reverse transfer capacitance and excellent high-frequency characteristic. · Adoption of FBET process. Package Dimensions unit:mm 2038 [2SA1575/2SC4080] E : Emitter C : Collector B : Base ( ) : 2SA1575 S |
|
|
|
|
Sanyo Electric |
Dual D-Type Filp-Flop |
|
|
|
|
Sanyo Electric |
Dual D-Type Filp-Flop |
|
|
|
|
Sanyo |
2SC4075 · Highly resistant to breakdown and wide ASO. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4075] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : |
|
|
|
|
Sanyo |
NPN Epitaxial Planar Silicon Transistors |
|
|
|
|
Sanyo Semicon Device |
Silicon NPN Transistor • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector |
|
Desde 2024. D4U Semiconductor.
|