Sanyo C10 Hoja de datos

No.	parte #	Fabricante	Descripción
1	FC107	Sanyo Semicon Device	PNP Transistor · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC107 is formed with two chips, being equivalent to the 2SA1341, placed in
2	C1046	Sanyo	NPN Transistor
3	FC106	Sanyo Semicon Device	NPN Transistor · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC106 is formed with two chips, being equivalent to the 2SC3395, placed in
4	FC108	Sanyo Semicon Device	NPN Transistor · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC108 is formed with two chips, being equivalent to the 2SC3395, placed in
5	LE28C1001T-12	Sanyo Semicon Device	1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby
6	LE28C1001T-15	Sanyo Semicon Device	1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby
7	FC105	Sanyo Semicon Device	PNP Transistor · On-chip bias resistors (R1=47kΩ, R2=47kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC105 is formed with two chips, being equivalent to the 2SA1341, placed in
8	FC109	Sanyo Semicon Device	PNP Transistor · On-chip bias resistors (R1=22kΩ, R2=22kΩ) · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC109 is formed with two chips, being equivalent to the 2SA1342, placed in
9	LE28C1001M	Sanyo Semicon Device	1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby
10	LE28C1001T	Sanyo Semicon Device	1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby
11	LE28C1001T-90	Sanyo Semicon Device	1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby
12	DTC10C-N	Sanyo Semicon Device	10A Bidirectional Thyristor
13	DTC10E-N	Sanyo Semicon Device	10A Bidirectional Thyristor
14	DTC10G-N	Sanyo Semicon Device	10A Bidirectional Thyristor
15	16TQC10M	Sanyo Semiconductor	High Voltage Products M,20TQC47M,16TQC10M,16TQC68M,20TQC15M,16TQC22M, 20TQC22MV,20TQC33MV,16TQC33MV,16TQC47MV (rated voltage applied) Characteristics –55 to +105 (°C) 5.6 to 68 (µF) _ 20% M:+ 16 to 25 (V.DC) ≤ 10.0 (%) ≤ 0.1CV B2size: ≤ 0.3CV Please see the attached char
16	C1050	Sanyo	NPN Transistor
17	DBC10	Sanyo Semicon Device	1A Single-Phase Bridge Rectifier · Plastic molded structure. · Peak reverse voltage:VRM=200 to 600V. · Average rectified current:IO=1.0A. Package Dimensions unit:mm 1241 [DBC10] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified
18	DTC10-N	Sanyo Semicon Device	10A Bidirectional Thyristor