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Sanyo |
2SB1136 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1136/2SD1669] ( ) : 2SB1136 Sp |
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Sanyo |
2SB1118 · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚ |
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Sanyo |
(LB11861) Direct PWM Variable Speed Fan Motor Driver IC Developed tion. At the same time, there are also strong demands for miniaturization and quieter operation. Thus conventional air cooling methods are now reaching the limits of their applicability. Currently, both notebook and desktop personal computers often u |
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Sanyo Semicon Device |
Three-Phase Brushless Motor Driver • • • • • • • Direct PWM drive output Speed discriminator + PLL speed control circuit Speed lock detection output Built-in crystal oscillator circuit Forward/reverse switching circuit Braking circuit (short braking) Full complement of on-chip protect |
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Sanyo Semicon Device |
2SB1143 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. 1.6 0.8 1.4 4.0 1.0 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Col |
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Sanyo Semicon Device |
2SB1140 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
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Sanyo Semicon Device |
2SB1134 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.4V max/IC=( –)3A, IB=( –)0.3A. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications |
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Sanyo |
2SB1168 · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time. Package Dimensions unit:mm 2043B [2SB1168/2SD1725] 8.0 4.0 2.0 2.7 1.5 |
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Sanyo |
2SB1122 · Adoption of FBET process.. · Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absol |
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Sanyo |
2SB1125 · High DC current gain. · Large current capacity and wide ASO. · Very small size making it easy to provide high- density, small-sized hybrid IC’. Package Dimensions unit:mm 2038 [2SB1125/2SD1625] ( ) : 2SB1125 Specifications Absolute Maximum Rati |
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Sanyo Semicon Device |
Single-Phase Full-Wave Fan Motor Driver • Single-phase full-wave drive (16V, 1.0A transistors are built in) • Built-in variable speed function controlled by a thermistor input The LB11961 can implement quiet, low-vibration variable speed control using externally clocked high side transisto |
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Sanyo |
2SB1120 · Low collector-to-emitter saturation voltage : VCE(sat)max= –0.45V. · Large current capacity : IC= –2.5A, ICP= –5A. · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1120] E : Emitte |
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Sanyo |
2SB1121 · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Large current capacity and wide ASO. · Fast switching speed. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. [2SB1121/2SD1621] E |
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Sanyo |
2SB1123 • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s fu |
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Sanyo |
2SB1127 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Co |
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Sanyo |
2SB1131 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Col |
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Sanyo |
2SB1135 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.4V max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1135/2SD1668] ( ) : 2SB1135 Specifications Abso |
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Sanyo |
2SB1141 · Low saturation voltage and excellent linearity of hFE. · Wide ASO. Package Dimensions unit:mm 2042A [2SB1141/2SD1681] ( ) : 2SB1141 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter V |
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Sanyo |
2SB1166 · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switchint time. Package Dimensions unit:mm 2043B [2SB1166/2SD1723] 8.0 4.0 2.0 2.7 1.5 9.0 11.0 1.6 0.8 3.0 15.5 0.8 0.6 0.5 ( ) : 2SB1166 Spec |
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Sanyo |
2SB1126 • High DC current gain (4000 or greater). • Large current capacity. • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SB1126 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Volt |
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Desde 2024. D4U Semiconductor.
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