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Sanyo Semicon Device |
2SA1704 · Adoption of FBET, MBIT processes. · Low collector-to-emitter voltage. · Large current capacity and wide ASO. · Fast switching speed. ( ) : 2SA1704 E : Emitter C : Collector B : Base SANYO : NMP Specifications Absolute Maximum Ratings at Ta = 25˚ |
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Sanyo Semicon Device |
2SA1770 · Adoption of MBIT process. · High breakdown voltage and large current capacity. Package Dimensions unit:mm 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1770 Specifications Absolute Maximum Ratings at T |
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Sanyo |
2SA1786 · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Package Dimensions uni |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1703/2SC4483] ( ) : 2SA1703 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base |
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Sanyo |
2SA1703 · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1703/2SC4483] ( ) : 2SA1703 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base |
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Sanyo |
2SA1773 · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1773 : PNP Eppitaxial Planar Silicon Transistor 2SC4616 : NPN Triple Diffused Planar Silicon Transistor 2SA1773/2SC4616 High-Voltage Driver Applications Package Dimensions un |
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Sanyo |
2SA1777 · High fT : fT=400MHz (typ). · High breakdown voltage : VCEO≥250V(min). · High current. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP). · Complementary pair with the 2SA1777/2SC4623. · |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064A [2SA1708/2SC4488] 2.5 1.45 6.9 1.0 4.5 1.0 0.6 1.0 0.9 1 2 3 0.5 0.45 ( ) : 2SA1708 2.54 2.54 Spec |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Large current capacity (IC=2A). · High breakdown voltage (VCEO≥400V). 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Package Dimensions uni |
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Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
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Sanyo Semicon Device |
PNP / NPN Transistor |
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Sanyo Semicon Device |
2SA1708 |
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Sanyo Semicon Device |
2SA1707 · Adoption of FBET, MBIT processes. · Large current capacity, wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1707/2SC4487] ( ) : 2SA1707 Specifications Absolute Maximum Ratings |
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Sanyo |
2SA1701 · Large current capacity. · Low collector-to-emitter saturation voltage. Package Dimensions unit:mm 2064 [2SA1701/2SC4481] ( ) : 2SA1701 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector- |
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Sanyo |
2SA1705 · Adoption of FBET process. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1705/2SC4485] ( ) : 2SA1705 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to- |
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Sanyo |
2SA1709 • Adoption of FBET, MBIT processes • Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emit |
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Sanyo |
2SA1710 · High breakdown voltage (VCEO≥300V). · Excellent high frequency characteristic. · Adoption of MBIT process. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Package Dimensions unit:m |
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Sanyo |
2SA1740 · High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity. PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Package Dimensions unit:mm 203 |
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Sanyo |
2SA1768 · Adoption of MBIT process. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1768/2SC4612] ( ) : 2SA1768 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Bas |
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Sanyo |
2SA1769 · Adoption of MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. Package Dimensions unit:mm 2042A [2SA1769/2SC4613] ( ) : 2SA1769 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector- |
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Desde 2024. D4U Semiconductor.
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