| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Sanyo Semicon Device |
Monolithic Linear IC • High sensitivity on limiting : 18µV typ. • Low distortion : 0.05% typ. determined by the linearity of phase characteristics in phase shifting circuit. • High demodulation output : 330 mVrms typ. • High S/N ratio : 78.5dB typ. • Muting at detuning w |
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Sanyo |
FM IF |
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Sanyo Semicon Device |
2SA1207 · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of h FE and small C ob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Sp |
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Sanyo |
FM/AM Tuner System • Minimum number of external parts required (No AM detection coil required). • High S/N : FM 81dB AM 53dB • Low-level AM oscillator with ALC : Pin 16 OSC output MW 130mV SW 70 mV to 90 mV (7MHz) (24MHz) • Less AM whistle interference : Whistle 1% at |
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Sanyo Semiconductor |
FM IF System |
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Sanyo Semicon Device |
High-Precision CRT Display Video Output Amplifier |
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Sanyo Semiconductor |
FM / AM IF |
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Sanyo |
2SA1248 · High breakdown voltage. · Large current capacity. · Using MBIT process Package Dimensions unit:mm 2009B [2SA1248/2SC3116] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1248 Specifications Absolute Maximum Ratings a |
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Sanyo Semiconductor |
FM / AM IF |
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Sanyo Semiconductor |
FM IF |
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Sanyo Semicon Device |
2SA1208 · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed. Package Dimensions unit:mm 2006A [2SA1208/2SC2910] ( ) : 2SA1208 Specifications EIAJ:SC-51 SANYO:MP B:Base C:Collector E:Emit |
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Sanyo |
Epitaxial Planar Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage. · Large current capacity. · Using MBIT process Package Dimensions unit:mm 2009B [2SA1248/2SC3116] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1248 Specifications Absolute Maximum Ratings a |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1249 Specifications Absolute Maximum Ra |
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Sanyo |
PNP Transistor |
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Sanyo Semicon Device |
2SA1246 · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Coll |
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Sanyo |
2SA1249 · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1249 Specifications Absolute Maximum Ra |
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Sanyo |
2SA1259 · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1259/2SC3145] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1259 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle |
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Sanyo |
2SA1289 · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1289 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co |
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Sanyo |
Monolithic Linear IC • Minimum number of external parts required. • Excellent S/N. • Local OSC with ALC. • Local OSC buffer. • Tuning indicator pin (common with narrow-band stop signal and muting drive output). • Variable stop sensitivity (variable separately for FM, AM) |
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Desde 2024. D4U Semiconductor.
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