| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Sanyo |
2SB1136 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1136/2SD1669] ( ) : 2SB1136 Sp |
|
|
|
|
Sanyo |
2SB888 · High DC current gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage : VCE(sat)= –0.8V typ. Package Dimensions unit:mm 2003A [2SB888] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to- |
|
|
|
|
Sanyo Semicon Device |
2SB1204 |
|
|
|
|
Sanyo |
2SB1118 · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1118/2SD1618] ( ) : 2SB1118 Specifications Absolute Maximum Ratings at Ta = 25˚ |
|
|
|
|
Sanyo |
2SB1205 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. · Small and slim package making it easy to make 2SB1205-applied sets smaller. Package Dimensions unit:mm 2045B [2SB1205] unit:mm 2044B |
|
|
|
|
Sanyo |
2SB1228 · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. · Micaless package facilitating mounting. ( ) : 2SB1228 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25 |
|
|
|
|
Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base |
|
|
|
|
Sanyo Semicon Device |
2SB1143 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. 1.6 0.8 1.4 4.0 1.0 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Col |
|
|
|
|
Sanyo Semicon Device |
2SB1225 |
|
|
|
|
Sanyo |
2SB827 · Low collector-to-emitter saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO. Package Dimensions unit:mm 2022A [2SB827/2SD1063] ( ) : 2SB827 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t |
|
|
|
|
Sanyo Semiconductor |
2SB1203 · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. Package Dimensions unit:mm 2045B [ |
|
|
|
|
Sanyo Semicon Device |
2SB631K · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specific |
|
|
|
|
Sanyo Semicon Device |
2SB764 E=( –)2V, IC=( –)1A VCE=( –)10V, IC=( –)50mA VCB=( –)10V, f=1MHz IC=( –)500mA, IB=( –)50mA IC=( –)500mA, IB=( –)50mA 60* 30 150 (20) 12 ( –0.2) 0.15 ( –)0.85 ( –0.7) 0.5 ( –)1.2 MHz pF pF V V V Conditions Ratings min typ max ( –)1 ( –)1 320* Unit µA µA Any and all |
|
|
|
|
Sanyo Semicon Device |
2SB1140 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
|
|
|
|
Sanyo Semicon Device |
2SB1406 · Darlington connection. · High DC current gain. · Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
|
|
|
|
Sanyo Semicon Device |
2SB1134 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.4V max/IC=( –)3A, IB=( –)0.3A. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications |
|
|
|
|
Sanyo |
2SB1468 · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2041A [2SB1468/2SD2219] ( ) : 2SB1468 Specifications 1 : Base 2 : |
|
|
|
|
Sanyo |
2SB1388 · High DC current gain. · Large current capacity and large ASO. · Low saturation volatage. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039A [2SB1388/2SD2093] ( ) : 2SB1388 Specifications Absolute Maximum Ratings at Ta = 2 |
|
|
|
|
Sanyo |
2SB1168 · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Short switching time. Package Dimensions unit:mm 2043B [2SB1168/2SD1725] 8.0 4.0 2.0 2.7 1.5 |
|
|
|
|
Sanyo |
2SB1122 · Adoption of FBET process.. · Very small size making it easy to provide high- density hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1122/2SD1622] E : Emitter C : Collector B : Base ( ) : 2SB1122 Specifications SANYO : PCP (Bottom view) Absol |
|
Desde 2024. D4U Semiconductor.
|